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EPIGAP OSA Photonics High Brightness 770 nm IR LED 1206 Surface Mount Package OIS-330-770-X-TU

Category IR LED Brand EPIGAP OSA Photonics Condition New

Specifications

Country of Origin India
Size 3.2mm x 1.6mm x 1.9mm
Brand EPIGAP OSA Photonics
Model OIS-330-770-X-TU
Technology GaP, AlInGaP, GaAlAs and InGaN
Packaging Tape
Mount Type Surface
Series OIS-330
Number Of Leds 1
Package Type 1206
Number of Pins 2
Lens Shape Dome
Maximum Supply Voltage 2V
Peak Wavelength 770nm
LED Material GaP, InGaN, GaAlAs, AlInGaP
Radiant Intensity 7.1mW/sr
view angle 40°
soldering pads gold plated
circuit substrate glass laminated epoxy
Lead free solderable, soldering pads gold plated
taping face-up(TU) or face-down(TD) possible

Key Features

  • Peak wavelength of 770 nm delivers efficient infrared emission suitable for sensing applications.
  • Radiant intensity rated at 7.1 mW/sr provides strong IR output.
  • Compact 1206 package size with dimensions 3.2 mm x 1.6 mm x 1.9 mm.
  • Gold-plated soldering pads ensure reliable electrical contact and lead-free solder compatibility.
  • Glass laminated epoxy circuit substrate offers mechanical stability.
  • Dome lens shape provides a 40° viewing angle for focused IR emission.
  • Single LED with 2 pins designed for surface mounting on PCBs.
  • Maximum supply voltage of 2 V for efficient operation.

Product Description

EPIGAP OSA Photonics OIS-330-770-X-TU is a high brightness infrared light-emitting diode (IR LED) designed for industrial, scientific, and electronic applications. Featuring a precise peak wavelength of 770 nm, this IR LED offers reliable performance in sensing, detection, and illumination.

Housed in a compact 1206 surface mount package measuring 3.2 mm x 1.6 mm x 1.9 mm, the device integrates easily into printed circuit boards, supporting modern SMT manufacturing processes. The dome-shaped lens produces a focused 40° viewing angle, facilitating directed IR emission essential in optical systems and communication devices.

The LED is constructed using advanced semiconductor materials including GaP, AlInGaP, GaAlAs, and InGaN, ensuring superior luminous efficiency and longevity. It features gold-plated soldering pads that are lead-free solderable, providing excellent electrical connectivity and compliance with modern environmental standards.

The circuit substrate uses glass laminated epoxy, contributing to device robustness and mechanical stability. With a maximum supply voltage of 2 V, the LED operates efficiently under controlled electrical conditions. Supplied on tape packaging, face-up (TU) or face-down (TD) configurations allow flexible integration into automated assembly lines.

Peak wavelength: 770 nm for precise IR emission. Radiant intensity: 7.1 mW/sr ensuring bright output. Package: 1206 surface mount for compact footprint. Lens shape: Dome lens with 40° viewing angle. Gold plated soldering pads enable reliable connections and lead-free soldering.

Glass laminated epoxy substrate enhances durability. Single LED with 2 pins optimized for SMT assembly. Tape packaging with face-up or face-down options supports manufacturing efficiency.

This IR LED is suitable for applications in electronics manufacturing, industrial sensing, automated equipment, and optical instrumentation. Its compact size and robust design make it an ideal component for high precision and high reliability IR illumination and detection tasks.

Explore our full range of photonics and LED components to find the right solution for your industrial and technological needs.

EPIGAP OSA Photonics High Brightness 770 nm IR LED 1206 Surface Mount Package OIS-330-770-X-TU
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Frequently Asked Questions

The peak wavelength of this model is 770 nm, which delivers efficient infrared emission suitable for various sensing applications.

The radiant intensity is rated at 7.1 mW/sr, providing strong infrared output for effective performance in applications.

This model has dimensions of 3.2 mm x 1.6 mm x 1.9 mm, making it compact for integration into printed circuit boards.

The maximum supply voltage for this IR LED is 2 V, allowing for efficient operation under controlled electrical conditions.

It features a dome lens shape that provides a 40° viewing angle for focused infrared emission.

The LED is constructed using advanced semiconductor materials including GaP, AlInGaP, GaAlAs, and InGaN, ensuring efficient performance.

It has gold-plated soldering pads that are lead-free solderable, ensuring reliable electrical contact.

The circuit substrate is made of glass laminated epoxy, which enhances the mechanical stability of the device.

The LED is supplied on tape packaging, with options for face-up (TU) or face-down (TD) configurations to support automated assembly.

This model features 2 pins, designed for surface mounting on printed circuit boards.

This model is part of the OIS-330 series, which includes various high brightness infrared LEDs.

It is suitable for applications in electronics manufacturing, industrial sensing, automated equipment, and optical instrumentation.

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