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EPIGAP OSA Photonics IR LED 775 nm 2.8 mW/sr Radiant Intensity 0805 Surface Package OIS-170-775-X-T

Category LED Brand EPIGAP OSA Photonics Condition New

Specifications

Country of Origin India
Size 1.9mm x 1.2mm x 1.2mm
Brand EPIGAP OSA Photonics
Model OIS-170-775-X-T
Technology GaP, AlInGaP, GaAlAs and InGaN
Packaging Tape
Mount Type Surface
Series OIS-170
Number Of Leds 1
Package Type 0805
Number of Pins 2
Lens Shape Square
Maximum Supply Voltage 2.1V
Peak Wavelength 775nm
LED Material AlInGaP, GaP, GaAlAs, InGaN
Radiant Intensity 2.8mW/sr
view angle 140°
soldering pads gold plated
circuit substrate glass laminated epoxy
Lead free solderable, soldering pads Gold plated

Key Features

  • This IR LED emits peak wavelength at 775 nm suitable for infrared applications.
  • The 0805 package size measures 1.9 mm by 1.2 mm by 1.2 mm with a square lens shape.
  • Radiant intensity is rated at 2.8 mW/sr ensuring bright output.
  • Gold plated soldering pads and lead free solderable construction enhance assembly reliability.
  • It uses semiconductor materials including AlInGaP, GaP, GaAlAs, and InGaN for high performance.
  • The device is designed for surface mounting on glass laminated epoxy circuit substrates.
  • It offers a wide 140° viewing angle for efficient light dispersion.
  • Available on tape for automated SMT assembly and supports multiple assembly methods.

Product Description

EPIGAP OSA Photonics OIS-170-775-X-T is a high brightness infrared LED emitting at a peak wavelength of 775 nm, packaged in a compact 0805 surface mount design. The component delivers a radiant intensity of 2.8 mW per steradian, suitable for a variety of IR sensing and illumination applications in electronics and industrial equipment.

The LED utilizes advanced semiconductor materials such as Aluminum Indium Gallium Phosphide (AlInGaP), Gallium Phosphide (GaP), Gallium Aluminum Arsenide (GaAlAs), and Indium Gallium Nitride (InGaN) to achieve optimal performance and reliability. Its square lens shape and wide 140-degree viewing angle ensure broad infrared light dispersion.

The 0805 package dimensions of 1.9 mm by 1.2 mm by 1.2 mm make it suitable for compact circuit designs. The device features gold plated soldering pads and is lead free solderable, compatible with all standard surface mount assembly methods on glass laminated epoxy circuit substrates.

Supplied on tape packaging, the OIS-170-775-X-T supports automated assembly processes, making it ideal for high volume manufacturing. It operates at a maximum supply voltage of 2.1 volts and includes two pins to accommodate standard IR LED circuit configurations.

This IR LED is ideal for use in industrial electronics, instrumentation, sensor assemblies, and other optoelectronic devices requiring efficient and reliable infrared emission. It complies with necessary standards but does not carry automotive or other special approvals.

Peak wavelength of 775 nm for infrared applications. Compact 0805 surface mount package measuring 1.9x1.2x1.2 mm. Radiant intensity rated at 2.8 mW/sr. Gold plated, lead free solderable pads for reliable mounting. Wide 140° viewing angle with square lens shape.

Glass laminated epoxy circuit substrate for durability. Soldering pads and pads suitable for SMT assembly tape packaging. Maximum supply voltage of 2.1 V for safe operation. This product is categorized under IR LEDs in Electronics Components at EnvMart. Browse related EPIGAP OSA Photonics LEDs for advanced optoelectronic solutions.

EPIGAP OSA Photonics IR LED 775 nm 2.8 mW/sr Radiant Intensity 0805 Surface Package OIS-170-775-X-T
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Frequently Asked Questions

The peak wavelength of this IR LED is 775 nm, making it suitable for infrared applications.

This model has a radiant intensity rated at 2.8 mW/sr, ensuring bright output for infrared applications.

The dimensions of the 0805 package are 1.9 mm by 1.2 mm by 1.2 mm.

The maximum supply voltage for this LED is 2.1 volts.

This model is designed for surface mounting on glass laminated epoxy circuit substrates.

It features a wide viewing angle of 140°, allowing for efficient light dispersion.

The LED is constructed using semiconductor materials including AlInGaP, GaP, GaAlAs, and InGaN.

This model has two pins, accommodating standard IR LED circuit configurations.

The OIS-170-775-X-T is supplied on tape packaging, supporting automated assembly processes.

The lens shape of this model is square, which aids in broad infrared light dispersion.

Yes, it features gold plated soldering pads and is lead free solderable, enhancing assembly reliability.

This IR LED is suitable for industrial electronics, instrumentation, sensor assemblies, and other optoelectronic devices requiring efficient infrared emission.

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