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EPIGAP OSA Photonics IR LED 855 nm Peak Wavelength, Radiant Flux 27mW, Square Lens, Surface Mount Package OIS-150-IT855-X-T

Category LED Brand EPIGAP OSA Photonics Condition New

Specifications

Country of Origin India
Size 3.2mm x 1.6mm x 1.2mm
Brand EPIGAP OSA Photonics
Model OIS-150-IT855-X-T
Technology GaP, AlInGaP, GaAlAs and InGaN
Packaging Tape
Mount Type Surface
Series OIS-150
Number Of Leds 1
Package Type 1206
Number of Pins 2
Lens Shape Square
Peak Wavelength 855nm
Radiant Flux 27mW
LED Material GaAlAs, GaP, InGaN, AlInGaP
Radiant Intensity 5.5mW/sr
view angle 140°
soldering pads gold plated
circuit substrate glass laminated epoxy
Lead free solderable, soldering pads gold plated
taping face-up(TU) or face-down(TD) possible

Key Features

  • This IR LED features a radiant flux of 27mW, providing efficient infrared light emission.
  • The device uses a square lens shape to optimize light output and beam profile.
  • It utilizes advanced LED materials including GaAlAs, GaP, InGaN, and AlInGaP for superior performance.
  • The package size is 3.2mm x 1.6mm x 1.2mm with a viewing angle of 140 degrees suitable for broad coverage.
  • Soldering pads are gold plated and lead-free solderable, allowing reliable SMT assembly.
  • Mounting is surface type, taped in 8 mm blister tape for automated production line compatibility.
  • Designed for use in electronic displays, optoelectronic devices, and specialized lighting applications.

Product Description

EPIGAP OSA Photonics OIS-150-IT855-X-T is an infrared LED with a peak wavelength of 855 nm housed in a compact, industry-standard 1206 surface mount package. It delivers a radiant flux of 27mW and a radiant intensity of 5.5 mW/sr, making it ideal for high brightness infrared applications in electronics and optoelectronics.

The LED features a square lens design and a wide 140° viewing angle to maximize light dispersion and efficiency. It is manufactured using advanced semiconductor materials including Gallium Aluminum Arsenide (GaAlAs), Gallium Phosphide (GaP), Indium Gallium Nitride (InGaN), and Aluminum Indium Gallium Phosphide (AlInGaP). The device's circuit substrate is made of glass laminated epoxy, ensuring durability and electrical isolation.

This IR LED supports all SMT assembly methods with its gold plated, lead-free solderable soldering pads arranged for surface mount technology. Packaged in tape and reel format, it facilitates high-volume manufacturing and automated component placement.

Its compact size of 3.2 mm by 1.6 mm by 1.2 mm suits tightly packed circuit boards, and the taping allows options for face-up or face-down placement to meet diverse manufacturing needs.

Applications include use in telecommunications equipment, sensor systems, remote controls, security systems, and other industrial or commercial infrared lighting solutions. The lack of automotive certification denotes suitability primarily for industrial and commercial use rather than automotive applications.

This IR LED features a radiant flux of 27mW, providing efficient infrared light emission. The device uses a square lens shape to optimize light output and beam profile. It utilizes advanced LED materials including GaAlAs, GaP, InGaN, and AlInGaP for superior performance.

The package size is 3.2mm x 1.6mm x 1.2mm with a viewing angle of 140 degrees suitable for broad coverage. Soldering pads are gold plated and lead-free solderable, allowing reliable SMT assembly. Mounting is surface type, taped in 8 mm blister tape for automated production line compatibility.

Designed for use in electronic displays, optoelectronic devices, and specialized lighting applications. Explore the full range of high-quality LEDs and electronic components at EnvMart for diverse industrial, commercial, and laboratory applications.

EPIGAP OSA Photonics IR LED 855 nm Peak Wavelength, Radiant Flux 27mW, Square Lens, Surface Mount Package OIS-150-IT855-X-T
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Frequently Asked Questions

The peak wavelength of this infrared LED is 855 nm.

This model has a radiant flux of 27 mW, which indicates its efficiency in infrared light emission.

The surface mount package size is 3.2 mm x 1.6 mm x 1.2 mm.

The LED is constructed using advanced materials including Gallium Aluminum Arsenide (GaAlAs), Gallium Phosphide (GaP), Indium Gallium Nitride (InGaN), and Aluminum Indium Gallium Phosphide (AlInGaP).

It has a wide viewing angle of 140 degrees, suitable for broad coverage.

This model includes one LED.

This LED supports surface mounting and is packaged in tape for automated production line compatibility.

The radiant intensity of this model is 5.5 mW/sr.

The circuit substrate is made of glass laminated epoxy, providing electrical isolation.

The soldering pads are gold plated and lead-free solderable, allowing reliable SMT assembly.

This infrared LED is designed for use in electronic displays, optoelectronic devices, telecommunications equipment, and sensor systems.

It is packaged in tape and reel format, facilitating high-volume manufacturing and automated component placement.

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