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EPIGAP OSA Photonics 740 nm IR LED 8mW/sr 1206 Surface Package OIS-330-740-X-TU

Category LED Brand EPIGAP OSA Photonics Condition New

Specifications

Country of Origin India
Size 3.2mm x 1.6mm x 1.9mm
Brand EPIGAP OSA Photonics
Model OIS-330-740-X-TU
Technology GaP, AlInGaP, GaAlAs and InGaN
Packaging Tape
Mount Type Surface
Series OIS-330
Number Of Leds 1
Package Type 1206
Number of Pins 2
Lens Shape Dome
Maximum Supply Voltage 2V
Peak Wavelength 740nm
LED Material AlInGaP, GaP, InGaN, GaAlAs
Radiant Intensity 8mW/sr
view angle 40°
soldering pads gold plated
circuit substrate glass laminated epoxy
Lead free solderable, soldering pads gold plated
taping face-up(TU) or face-down(TD) possible

Key Features

  • The LED uses AlInGaP, GaP, InGaN, and GaAlAs materials for optimal infrared performance.
  • It features a dome lens shape enhancing light emission quality.
  • Gold-plated soldering pads ensure reliable surface mount technology assembly.
  • The device operates with a maximum supply voltage of 2 V and is lead-free solderable.
  • The compact package size measures 3.2 mm x 1.6 mm x 1.9 mm for space-constrained applications.
  • The circuit substrate is made of glass laminated epoxy for durability and reliability.
  • Devices are supplied in tape packaging compatible with automated SMT assembly lines.
  • Taping options include face-up (TU) or face-down (TD) orientations to suit manufacturing needs.

Product Description

EPIGAP OSA Photonics OIS-330-740-X-TU is a specialized infrared (IR) LED emitting at a peak wavelength of 740 nm, housed in a compact 1206 surface mount package. This LED is engineered for high brightness and precision in electronic components requiring reliable IR light sources.

The LED irradiance of 8 mW/sr coupled with a 40° viewing angle allows focused illumination appropriate for sensing, communication, and display applications across industrial, electronic, and laboratory settings.

Constructed from advanced semiconductor materials including AlInGaP, GaP, InGaN, and GaAlAs, this component assures stable and efficient IR emission. The gold-plated soldering pads facilitate robust surface mounting and maintain solderability standards with lead-free processes.

Compact physical dimensions of 3.2 mm by 1.6 mm by 1.9 mm enable integration in densely packed PCB designs. The circuit substrate is fabricated using glass laminated epoxy, promoting enhanced mechanical strength and thermal performance.

Supplied on tape packaging, the LED is optimized for automated placement on SMT assembly lines, available in both face-up and face-down tape options to meet production versatility. This device stands compliant with no specific automotive or other standards but meets industry quality expectations for general IR LED applications.

Ideal for use in electronic sensing, remote control, data communication, and other IR illumination solutions, the OIS-330-740-X-TU serves OEMs and engineers developing efficient lighting modules with exact wavelength requirements.

The LED uses AlInGaP, GaP, InGaN, and GaAlAs materials for optimal infrared performance. It features a dome lens shape enhancing light emission quality. Gold-plated soldering pads ensure reliable surface mount technology assembly.

The device operates with a maximum supply voltage of 2 V and is lead-free solderable. The compact package size measures 3.2 mm x 1.6 mm x 1.9 mm for space-constrained applications. The circuit substrate is made of glass laminated epoxy for durability and reliability.

Devices are supplied in tape packaging compatible with automated SMT assembly lines. Taping options include face-up (TU) or face-down (TD) orientations to suit manufacturing needs. Suitable for diverse electronics applications requiring infrared illumination or sensing.

Browse the Electronics Components under IR LED category at EnvMart for a wide range of advanced optoelectronics solutions tailored for industrial and commercial electronics innovations.

EPIGAP OSA Photonics 740 nm IR LED 8mW/sr 1206 Surface Package OIS-330-740-X-TU
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Frequently Asked Questions

The peak wavelength of this infrared LED is 740 nm.

This model operates with a maximum supply voltage of 2 V.

The radiant intensity of this infrared LED is 8 mW/sr.

The compact package size measures 3.2 mm x 1.6 mm x 1.9 mm.

It is constructed from AlInGaP, GaP, InGaN, and GaAlAs materials for optimal infrared performance.

This model features a dome lens shape, which enhances light emission quality.

The LED is supplied in tape packaging, compatible with automated SMT assembly lines, with options for face-up (TU) or face-down (TD) orientations.

The viewing angle of this LED is 40°.

This infrared LED has 2 pins.

The soldering pads are gold-plated, ensuring reliable surface mount technology assembly.

The circuit substrate is made of glass laminated epoxy, which promotes enhanced mechanical strength and thermal performance.

This model is suitable for electronic sensing, remote control, data communication, and other IR illumination solutions.

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