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Nexperia PNP Transistor BC807DS,115, 500 mA, -45 V, 6-Pin TSOP BC807DS,115

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Nexperia PNP Transistor BC807DS,115, 500 mA, -45 V, 6-Pin TSOP BC807DS,115

Name: Nexperia PNP Transistor BC807DS,115, 500 mA, -45 V, 6-Pin TSOP BC807DS,115
Brand: Nexperia
SKU: 236732
Price: 0.13 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3.1mm
Model	BC807DS,115
Width	1.7mm
Mount Type	Surface
Series	BC807
Maximum Operating Temperature	150°C
Package Type	TSOP
Pin Count	6
Maximum Collector Emitter Voltage Vceo	-45V
Minimum DC Current Gain hFE	40
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	370mW
Maximum DC Collector Current Idc	-500mA
Transistor Configuration	Isolated
Infineon BC856UE6327HTSA1 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SC-74Brand	Infineon

Key Features

This transistor features a maximum power dissipation of 370 mW for reliable operation.
It has a minimum DC current gain (hFE) of 40 for efficient signal amplification.
Designed for surface mount applications with isolated transistor configuration.
Supports operating temperatures up to 150°C, suitable for various industrial uses.
Complies with automotive standard AEC-Q101 for enhanced durability and quality.
The compact dimensions of 3.1 mm length, 1.7 mm width, and 1.1 mm height allow space-saving PCB designs.
Maximum collector-base and emitter-base voltages are -50 V and -5 V respectively ensuring stable performance.
Ideal for general-purpose PNP transistor applications in electronics and electrical devices.

Product Description

Nexperia BC807DS,115 is a high-quality PNP bipolar transistor housed in a compact 6-pin TSOP package, offering a maximum DC collector current of 500 mA and collector-emitter voltage of -45 V. It supports surface mount technology with an isolated transistor configuration, making it suitable for compact and efficient PCB layouts.

This transistor provides a power dissipation capacity of 370 mW and a minimum DC current gain (hFE) of 40, making it effective for amplification and switching applications across industrial, automotive, and consumer electronics sectors. Its operating temperature limit of 150°C ensures robust performance under diverse environmental conditions.

With maximum ratings of -50 V collector-base voltage and -5 V emitter-base voltage, the BC807DS,115 transistor guarantees safe operation within specified voltage limits. The device complies with the automotive AEC-Q101 standard, highlighting its suitability for automotive electronics with stringent reliability demands.

Its compact form factor measuring 3.1 mm in length, 1.7 mm in width, and 1.1 mm in height allows space-saving designs in densely populated boards. The surface mount package type TSOP simplifies assembly and enhances manufacturing efficiency.

500 mA maximum collector current and -45 V collector-emitter voltage rating. 370 mW power dissipation capacity for reliable thermal management. Minimum current gain of 40 ensures effective amplification. Surface mount 6-pin TSOP package with isolated transistor configuration.

Operating temperature rating up to 150°C for harsh environments. Automotive grade AEC-Q101 compliance for superior quality.

This general purpose PNP transistor is ideal in applications including power management, signal amplification, switching circuits, and automotive electronic modules. It suits industrial, laboratory, commercial, and automotive environments requiring durable and precise semiconductor components.

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