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Taiwan Semiconductor Uni-Directional 1-Element TVS Diode 600W Peak Pulse Power 2-Pin DO-214 SMBJ30A
Specifications
| Country of Origin | China |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.237mm |
| Length | 4.57mm |
| Model | SMBJ30A |
| Width | 3.94mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 48.4V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 33.3V |
| Maximum Reverse Stand-off Voltage Vwm | 30V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 12.4A |
| Maximum Reverse Leakage Current | 5μA |
Key Features
- Single-element uni-directional diode design ensures reliable voltage clamp during transient events.
- Rated for a peak pulse power dissipation of 600 watts, suitable for robust industrial and electronic applications.
- Compact surface mount DO-214 package with dimensions 4.57mm length, 3.94mm width, and 2.237mm height.
- Operating temperature range from -55°C to 150°C supports harsh environmental conditions.
- Low maximum reverse leakage current of 5μA helps maintain circuit integrity.
- Maximum peak pulse current handling up to 12.4A with excellent clamping voltage performance at 48.4V.
- Minimum breakdown voltage of 33.3V and maximum reverse standoff voltage of 30V.
- Designed for use in surface mount technology (SMT) applications requiring transient voltage protection.
Product Description
Taiwan Semiconductor SMBJ30A is a 1-element uni-directional transient voltage suppression (TVS) diode designed for protecting electronic circuits from voltage spikes and transient surges. This diode supports a peak pulse power dissipation of 600 watts and is packaged in a space-saving 2-pin DO-214 surface mount package with compact dimensions of 4.57mm length, 3.94mm width, and 2.237mm height.
Operable in temperatures ranging from -55°C to 150°C, the SMBJ30A diode provides robust protection suitable for industrial, electronic components, power management, and discrete semiconductor applications. Its single diode configuration and uni-directional design ensure fast response time to transient events, shielding sensitive components effectively.
The device features a minimum breakdown voltage (Vbr) of 33.3V and a maximum reverse standoff voltage (Vwm) of 30V, which allows it to clamp voltage spikes efficiently at a clamping voltage (VC) of 48.4V. It also supports a maximum peak pulse current (Ippm) of 12.4A at a test current (It) of 1mA, making it suitable for high transient current surges.
Its low maximum reverse leakage current of 5μA ensures minimal interference during normal operation. While not certified for automotive use, the SMBJ30A is ideally suited for transient voltage suppression across power lines in industrial, manufacturing, and electronic circuit protection scenarios.
Single-element uni-directional diode configuration. 600W peak pulse power rating for transient suppression. Compact DO-214 surface mount package. Wide operating temperature range from -55°C to 150°C. Clamping voltage of 48.4V with low leakage current.
Designed for integration in SMT electronic assemblies. This product is manufactured in China and does not carry additional standards or automotive approvals. For browsing more components like this, explore the Semiconductor and TVS Diode categories at EnvMart for specialized industrial and electronic component solutions.
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Frequently Asked Questions
The SMBJ30A diode has a peak pulse power dissipation of 600 watts, making it suitable for robust applications.
The maximum reverse stand-off voltage (Vwm) for the SMBJ30A is 30V.
The DO-214 package has dimensions of 4.57mm in length, 3.94mm in width, and 2.237mm in height.
The clamping voltage (VC) of the SMBJ30A is 48.4V, which allows it to efficiently clamp voltage spikes.
The SMBJ30A operates within a temperature range of -55°C to 150°C, suitable for harsh environmental conditions.
This model can handle a maximum peak pulse current (Ippm) of 12.4A at a test current (It) of 1mA.
The maximum reverse leakage current for this diode is 5μA, which helps maintain circuit integrity during normal operation.
The SMBJ30A features a single-element uni-directional diode configuration, designed for transient voltage suppression.
Yes, the SMBJ30A is designed for integration in surface mount technology (SMT) applications.
The minimum breakdown voltage (Vbr) for the SMBJ30A is 33.3V.
The SMBJ30A is suitable for protecting electronic circuits from voltage spikes and transient surges in industrial and electronic applications.
The SMBJ30A is manufactured in China.
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