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Semelab Common Source TetraFET N-Channel MOSFET, 10 A, 70 V Enhancement, 5-Pin DK D1008UK

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Semelab Common Source TetraFET N-Channel MOSFET, 10 A, 70 V Enhancement, 5-Pin DK D1008UK

Name: Semelab Common Source TetraFET N-Channel MOSFET, 10 A, 70 V Enhancement, 5-Pin DK D1008UK
Brand: Semelab
SKU: 223829
Price: 369.68 USD
Availability: InStock

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Category MOSFET Brand Semelab Condition New

Specifications

Country of Origin	United Kingdom
Brand	Semelab
Height	4.82mm
Length	24.76mm
Model	D1008UK
Width	6.47mm
Output Power	80W
Mount Type	Surface
Operating Frequency	1, 500MHz
Series	TetraFET
Maximum Operating Temperature	200°C
Package Type	DK
Minimum Operating Temperature	65°C
Standards/Approvals	RoHS
Pin Count	5
Channel Type	N
Maximum Continuous Drain Current Id	10A
Maximum Drain Source Voltage Vds	70V
Channel Mode	Enhancement
Transistor Configuration	Common Source

Key Features

The device features a 5-Pin DK package suitable for surface mounting.
It has an operating frequency of up to 1,500 MHz and an output power rating of 80 W.
Designed with an enhancement channel mode for efficient switching performance.
Operates reliably within a temperature range from -65°C to 200°C.
Measures 24.76 mm in length, 6.47 mm in width, and 4.82 mm in height.
The product complies with RoHS standards and is manufactured in the United Kingdom.
Automotive standard compliance is not applicable for this model.

Product Description

Semelab D1008UK is a Common Source TetraFET N-Channel MOSFET designed for high-frequency electronic applications. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 70 V, it is suitable for efficient power amplification and switching tasks.

This MOSFET operates at frequencies up to 1,500 MHz and supports output power up to 80 W, making it ideal for use in RF circuits, power supplies, and amplifier stages in industrial and communication equipment.

The semiconductor features a 5-Pin DK surface mount package, providing ease of integration into compact circuit boards. The enhancement channel configuration ensures low on-resistance and improved switching performance.

Designed to function reliably in harsh environments, the device withstands operating temperatures from -65°C to 200°C. Its compact dimensions of 24.76 mm length, 6.47 mm width, and 4.82 mm height make it suitable for space-constrained designs.

The device features a 5-Pin DK surface mount package for easy PCB integration. Maximum continuous drain current rated at 10 A, ideal for power semiconductor applications. Operates at up to 1,500 MHz frequency, suitable for RF and communication equipment.

Output power capability of 80 W ensures high performance in signal amplification. Wide operating temperature range from -65°C to 200°C for industrial and robust use. Compliant with RoHS directives, aligning with environmental standards.

Manufactured in the United Kingdom, ensuring quality production standards.

This MOSFET is extensively used in electronics, power management systems, industrial machinery, and communication devices. Its TetraFET technology provides reliable, efficient switching with common source transistor configuration, contributing to enhanced system performance and durability.

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