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Semelab Transistor 600 mA PNP 60 V 3-Pin LCC 1 2N2907ACSM

Category Bipolar Transistors Brand Semelab Condition New

Specifications

Country of Origin India
Brand Semelab
Height 1.4mm
Length 3.05mm
Model 2N2907ACSM
Width 2.54mm
Mount Type Surface
Maximum Operating Temperature 200°C
Package Type LCC 1
Minimum Operating Temperature -65°C
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RS Stock No. 738-7584P Brand: [Semelab](https://in.rsdelivers.com/brands/semelab)Manufacturers Part No.: 2N2907ACSM
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single

Key Features

  • The transistor is a PNP type suitable for general purpose amplification and switching.
  • It supports a maximum power dissipation of 500 mW ensuring reliable operation.
  • The device operates in temperatures ranging from -65°C to 200°C for enhanced durability.
  • Designed with a compact LCC 1 surface mount package measuring 3.05 mm in length and 2.54 mm in width.
  • Features a minimum DC current gain (hFE) of 50 for effective transistor performance.
  • It has a maximum emitter-base voltage rating of -5 V and collector-base voltage of -60 V.
  • The package height is 1.4 mm, optimizing board space for compact designs.
  • Ideal for use in electronic components, power connectors, and semiconductor circuits.

Product Description

Semelab 2N2907ACSM bipolar transistor is a PNP type device suitable for surface mount technology applications. It is designed for small signal amplification and switching with a maximum collector current of 600 mA and a maximum collector-emitter voltage of 60 V, housed in a 3-pin LCC 1 package.

This transistor is engineered to operate efficiently within a wide temperature range from -65°C up to 200°C, making it suitable for demanding industrial and electronic environments. Its compact dimensions of 3.05 mm length, 2.54 mm width, and 1.4 mm height offer excellent integration into densely packed circuit boards.

The maximum power dissipation rating of 500 mW ensures stable and reliable performance under typical operating conditions. The transistor's minimal DC current gain is specified at 50, providing effective signal gain for a variety of electronic circuit requirements.

Its maximum emitter-base voltage of -5 V and maximum collector-base voltage of -60 V provide robust protection against voltage stresses. The surface mount LCC 1 package facilitates automated assembly and efficient manufacturing processes.

Common applications include electronic components, power and signal switching, amplification circuits, and integration into power connectors and discrete semiconductor solutions often used in electronics and electrical industries.

The transistor is a PNP type suitable for general purpose amplification and switching. It supports a maximum power dissipation of 500 mW ensuring reliable operation. The device operates in temperatures ranging from -65°C to 200°C for enhanced durability.

Designed with a compact LCC 1 surface mount package measuring 3.05 mm in length and 2.54 mm in width. Features a minimum DC current gain (hFE) of 50 for effective transistor performance. It has a maximum emitter-base voltage rating of -5 V and collector-base voltage of -60 V.

The package height is 1.4 mm, optimizing board space for compact designs. Ideal for use in electronic components, power connectors, and semiconductor circuits. Explore more electronic components and semiconductor devices to enhance your industrial, laboratory, and manufacturing applications with EnvMart's extensive catalog.

Explore more products in our Bipolar Transistors category.

Semelab Transistor 600 mA PNP 60 V 3-Pin LCC 1 2N2907ACSM
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Frequently Asked Questions

The maximum collector current for this model is 600 mA.

It operates efficiently within a temperature range of -65°C to 200°C.

The LCC 1 package measures 3.05 mm in length, 2.54 mm in width, and has a height of 1.4 mm.

The maximum power dissipation rating is 500 mW.

The minimum DC current gain (hFE) is specified at 50.

It is a PNP type transistor suitable for general purpose amplification and switching.

The maximum collector-emitter voltage rating is 60 V.

The maximum emitter-base voltage is -5 V.

It has a total of 3 pins.

The configuration of this model is single.

The country of origin is India.

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