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Semelab 600 mA PNP Bipolar Transistor, Surface Mount, 60 V, 3-Pin LCC 1 Package 2N2907ACSM
Specifications
| Country of Origin | India |
|---|---|
| Brand | Semelab |
| Height | 1.4mm |
| Length | 3.05mm |
| Model | 2N2907ACSM |
| Width | 2.54mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 200°C |
| Package Type | LCC 1 |
| Minimum Operating Temperature | -65°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 738-7584 Brand: [Semelab](https://in.rsdelivers.com/brands/semelab)Manufacturers Part No.: 2N2907ACSM |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -60V |
| Maximum Power Dissipation Pd | 500mW |
| Maximum DC Collector Current Idc | 600mA |
| Transistor Configuration | Single |
Key Features
- Supports a maximum power dissipation of 500 mW ensuring reliable performance.
- PNP transistor with single transistor configuration ideal for switching and amplification.
- Operates over a wide temperature range from -65°C to 200°C.
- Compact dimensions with length of 3.05 mm, width of 2.54 mm, and height of 1.4 mm.
- Minimum DC current gain (hFE) of 50 for efficient signal amplification.
- Designed for surface mount applications with 3 pins in an LCC 1 package.
- Maximum collector-base voltage of -60 V and maximum emitter-base voltage of -5 V.
- Suitable for various electronic and industrial circuit applications requiring a small signal PNP transistor.
Product Description
Semelab 2N2907ACSM is a high-quality bipolar PNP transistor designed for surface mount technology applications. Featuring a maximum DC collector current of 600 mA and collector-emitter voltage rating of 60 V, this device is suited for amplification and switching tasks in both industrial and electronic circuits.
The transistor is housed in a compact 3-pin LCC 1 package, measuring 3.05 mm in length, 2.54 mm in width, and 1.4 mm in height, enabling efficient PCB space usage. It offers a maximum power dissipation of 500 mW, ensuring stable operation within demanding thermal limits.
Operational temperature range from -65°C up to 200°C makes it compatible with harsh environments and diverse industrial settings. The device exhibits a minimum DC current gain (hFE) of 50, allowing effective signal amplification in a wide range of applications.
The transistor's electrical limits include a maximum collector-base voltage of -60 V and a maximum emitter-base voltage of -5 V, guaranteeing safe operation under standard circuit conditions.
Typical use cases include discrete semiconductor functions in power electronics, signal processing, and control systems within industrial automation, automotive electronics (non-automotive standard compliant), laboratory instrumentation, and consumer electronics.
Supports a maximum power dissipation of 500 mW ensuring reliable performance. PNP transistor with single transistor configuration ideal for switching and amplification. Operates over a wide temperature range from -65°C to 200°C.
Compact dimensions with length of 3.05 mm, width of 2.54 mm, and height of 1.4 mm. Minimum DC current gain (hFE) of 50 for efficient signal amplification. Designed for surface mount applications with 3 pins in an LCC 1 package.
Maximum collector-base voltage of -60 V and maximum emitter-base voltage of -5 V. Suitable for various electronic and industrial circuit applications requiring a small signal PNP transistor.
Enhance your circuitry and design efficiency by integrating this reliable bipolar transistor in your applications. Explore EnvMart’s extensive semiconductor category for more components like this one.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) of this transistor is 60 V.
This model supports a maximum DC collector current of 600 mA.
The dimensions of this transistor are 3.05 mm in length, 2.54 mm in width, and 1.4 mm in height.
The minimum DC current gain (hFE) is 50, which allows for efficient signal amplification.
It operates over a wide temperature range from -65°C to 200°C.
The 2N2907ACSM is housed in an LCC 1 package with 3 pins.
The maximum power dissipation is 500 mW, ensuring reliable performance.
The maximum emitter-base voltage (VEBO) is -5 V.
This model is a PNP bipolar transistor designed for switching and amplification applications.
The country of origin for this transistor is India.
It is suitable for various electronic and industrial circuit applications, including power electronics and signal processing.
This transistor is designed for surface mount applications.
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