Infineon IPD Type P-Channel MOSFET, 9 A, 150 V Enhancement Mode, 3-Pin TO-252 Package IPD42DP15LMATMA1

The Infineon IPD42DP15LMATMA1 is a high-quality P-Channel MOSFET specifically designed for efficiency and reliability in power management applications. Featuring a maximum continuous drain current of 9 A and a maximum drain-source voltage of 150 V, this device employs enhancement mode operation to reduce design complexity in medium and low power electronic circuits.

Housed in a compact TO-252 surface mount package with three pins, this MOSFET is ideal for battery management systems, load switching, and reverse polarity protection. The device's low typical gate charge and a maximum drain-source resistance of 420 milliohms improve efficiency at low loads. It operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial and automotive environments.

Its robust avalanche ruggedness enhances durability when switching under varying frequencies, making it well suited for industrial automation and electronic control systems. The device delivers up to 83 watts of power dissipation, ensuring stable performance and long-term reliability.

Key specifications include a maximum gate-source voltage of 20 V and a forward voltage of -1.2 V. Its compact form factor (6.73 mm length, 6.22 mm width, and 2.41 mm height) allows easy integration into existing PCB layouts. Although it does not possess automotive certification, it meets standard industrial requirements.

This MOSFET features enhancement mode operation for reliable switching. It supports a maximum continuous drain current of 9 amperes. The device operates with a maximum drain-source voltage of 150 volts. The TO-252 package and 3-pin configuration enable easy surface mounting.

Suitable for battery management and industrial automation applications. Offers low on-resistance with 420 milliohm maximum drain-source resistance. Rated for operation from -55°C up to a maximum of 175°C. Features avalanche ruggedness for enhanced durability in switching tasks.

Maximum power dissipation is 83 watts, supporting robust performance.

This Infineon MOSFET is an excellent choice for designers seeking efficient power switching solutions in automotive, industrial automation, and battery management systems. Its compact package and high-performance characteristics provide reliable operation for demanding applications.

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