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ROHM P-Channel MOSFET 6 A 20 V Enhancement 3-Pin SC-96 RQ5C060BC
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 950μm |
| Length | 3mm |
| Model | RQ5C060BC |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RQ5C060BC |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-96 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 51mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 19.2nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Operates with a maximum continuous drain current of 6 amperes.
- Supports a maximum drain-source voltage of 20 volts, suitable for low voltage power switching.
- Features an enhancement channel mode for efficient switching performance.
- Comes in a compact SC-96 surface mount package with 3 pins for PCB integration.
- Has a maximum power dissipation rating of 1 watt ensuring thermal reliability.
- Works within a wide temperature range from -55°C to 150°C for diversified industrial applications.
- Incorporates a maximum drain-source resistance (Rds) of 51 milliohms for low on-resistance operation.
- Designed without automotive standard approvals for general electronics use.
Product Description
ROHM RQ5C060BC is a high-performance P-Channel MOSFET rated for 6 A continuous drain current and 20 V drain-source voltage. This enhancement mode transistor features a low on-resistance of 51 mΩ and is housed in a 3-pin SC-96 surface mount package that enables compact PCB layouts.
Its maximum power dissipation is 1 watt, supporting reliable operation under varying load conditions. The device can operate in extreme temperature ranges from -55°C to 150°C, making it suitable for demanding industrial, electronic, and power management applications.
With a typical gate charge of 19.2 nC at Vgs, the transistor offers efficient switching characteristics ideal for power conversion and switching circuits. The forward voltage is rated at -1.2 V, aiding in precise control of the device.
Maximum continuous drain current: 6 A. Maximum drain-source voltage: 20 V. Enhancement mode P-Channel MOSFET. Package Type: SC-96, 3-pin surface mount. Low on-resistance: 51 milliohms. Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation of 1 watt. Compact dimensions suitable for high-density electronics.
This MOSFET is ideal for industrial electronics, power management circuits, and semiconductor applications requiring reliable switching performance on printed circuit boards. ROHM's RQ5C060BC offers a balance of compact physical size and robust electrical properties for enhanced design efficiency.
Explore the collection of MOSFETs in the Electronics & Electricals category at EnvMart for diverse semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 amperes.
It supports a maximum drain-source voltage of 20 volts.
The maximum drain-source resistance (Rds) is 51 milliohms, allowing for low on-resistance operation.
This model comes in a compact SC-96 surface mount package with 3 pins for PCB integration.
It operates within a wide temperature range from -55°C to 150°C.
The maximum power dissipation rating is 1 watt, ensuring thermal reliability under varying load conditions.
The typical gate charge is 19.2 nC at Vgs, which contributes to its efficient switching characteristics.
The forward voltage is rated at -1.2 V, aiding in precise control of the device.
This MOSFET is suitable for industrial electronics, power management circuits, and semiconductor applications requiring reliable switching performance.
The height of this model is 950 μm.
The dimensions are 3 mm in length, 1.8 mm in width, and 950 μm in height.
The maximum gate-source voltage (Vgs) is -8V to +8V.
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