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STMicroelectronics N-Channel IGBT 30 A 650 V 3-Pin TO-247 Through Hole STGWA30HP65FB
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGWA30HP65FB |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 260W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Supports a maximum continuous collector current of 30 A.
- Maximum collector emitter voltage rating is 650 V for robust power applications.
- Capable of dissipating up to 260 W power, enabling high power handling.
- Fast switching speed of up to 1 MHz for efficient frequency conversion.
- Operates within temperature range from -55°C to 175°C.
- Features an advanced trench gate fieldstop structure for optimal conduction and switching performance.
- Includes a very fast soft recovery antiparallel diode to reduce switching losses.
- Package type is TO-247 with three pins, suitable for through-hole mounting.
Product Description
STMicroelectronics STGWA30HP65FB is a high-speed N-Channel IGBT product designed with an advanced trench gate fieldstop structure, providing an optimal balance between conduction and switching losses to maximize efficiency in frequency converters and power electronics applications.
This device features a maximum continuous collector current of 30 A and a collector emitter voltage rating of 650 V, making it suitable for demanding industrial, power management, and electronic converter environments.
The package is a 3-pin TO-247 through hole design, allowing easy integration into power modules and PCB assemblies requiring robust thermal management and electrical performance.
Its maximum power dissipation rating of 260 W allows high power handling, while the fast switching speed of 1 MHz supports efficient operation in switching power supplies and motor drives.
The device operates reliably over a wide temperature range from -55°C up to 175°C, meeting rigorous industrial standards including RoHS compliance. Supports a maximum continuous collector current of 30 A. Maximum collector emitter voltage of 650 V ensures reliable high voltage operation.
High power dissipation capability of 260 W supports demanding applications. Fast switching frequency of 1 MHz enables efficient power conversion. Wide operating temperature range from -55°C to 175°C suits harsh environments.
TO-247 package with through hole mounting for secure installation. Incorporates a very fast soft recovery antiparallel diode to minimize switching losses. Maximum gate emitter voltage of 20 V for stable gate control. Maximum collector emitter saturation voltage of 2 V reduces conduction losses.
This IGBT is ideal for industrial power supplies, frequency converters, HVAC systems, motor control, and other electronic power applications requiring efficient, reliable switching components.
Explore a wide range of semiconductor products including IGBTs at EnvMart for advanced power electronics solutions.
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