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ams OSRAM 400 to 1100 nm Photodiode, ±60 ° Angle of Half Sensitivity, Surface Mount TopSense Package SFH 2200

Category Photodiode Brand ams OSRAM Condition New

Specifications

Country of Origin Malaysia
Brand ams OSRAM
Height 0.85mm
Length 5.09mm
Model SFH 2200
Packaging Tape & Reel
Width 4mm
Mount Type Surface
Series SFH
Short Circuit Current 71μA
Maximum Operating Temperature 85°C
Package Type TopSense
Minimum Operating Temperature -40°C
Polarity Forward
Dark Current 1nA
Open Circuit Voltage 365V
Number of Pins 2
Typical Fall Time 0.04μs
Wavelength of Peak Sensitivity 940nm
Spectrums Detected 400 to 1100 nm
Breakdown Voltage 20V
Minimum Wavelength Detected 300nm
Maximum Wavelength Detected 1100nm
Angle of Half Sensitivity ±60 °

Key Features

  • Detects wavelengths from 300 nm to 1100 nm with peak sensitivity at 940 nm.
  • Features a fast typical rise and fall time of 0.04 μs each.
  • Operates reliably in temperature ranges from -40°C to 85°C.
  • Equipped with 2 pins and packaged on tape and reel for automated assembly.
  • Designed with forward polarity and a breakdown voltage of 20 V.
  • Has a dark current of 1 nA and short circuit current of 71 μA.
  • Complies with JEDEC J-STD-020D.01, IEC 60286-3, ANSI/ESDA/JEDEC JS-001 - HBM, and EIA 481-D standards.

Product Description

ams OSRAM SFH 2200 Photodiode is a silicon PIN photodiode engineered for spectral detection in the 400 to 1100 nm range.

It features a TopSense surface mount package with a ±60 ° angle of half sensitivity allowing for broad light acceptance. The photodiode exhibits a peak sensitivity wavelength of 940 nm, making it suitable for various optoelectronic applications.

This device operates within a temperature range of -40°C to 85°C and offers rapid response times with typical rise and fall times of 0.04 μs, ensuring effective performance in high-speed detection circuits.

The SFH 2200 has a forward polarity configuration with a breakdown voltage of 20 V and an open circuit voltage rating of 365 V. It maintains a low dark current of 1 nA and a short circuit current of 71 μA, providing high sensitivity and low noise operation.

Compliant with JEDEC J-STD-020D.01, IEC 60286-3, ANSI/ESDA/JEDEC JS-001 - HBM, and EIA 481-D standards, this photodiode ensures reliable quality and compatibility with industrial requirements.

Common applications include photointerrupters, industrial electronics, consumer electronics, control and drive circuits, and remote sensing tasks. Detects wavelengths from 300 nm to 1100 nm with peak sensitivity at 940 nm.

Features a fast typical rise and fall time of 0.04 μs each. Operates reliably in temperature ranges from -40°C to 85°C. Equipped with 2 pins and packaged on tape and reel for automated assembly. Designed with forward polarity and a breakdown voltage of 20 V.

Has a dark current of 1 nA and short circuit current of 71 μA. Complies with JEDEC J-STD-020D.01, IEC 60286-3, ANSI/ESDA/JEDEC JS-001 - HBM, and EIA 481-D standards. Available country of origin is Malaysia. This photodiode is an ideal choice for precision optoelectronic applications requiring a broad spectrum range and fast response.

Explore more high-quality Photodiodes and optoelectronic components in the Electronics Components category on EnvMart for your industrial and commercial applications.

ams OSRAM 400 to 1100 nm Photodiode, ±60 ° Angle of Half Sensitivity, Surface Mount TopSense Package SFH 2200
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