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ROHM NPN Small-Signal Transistor 150 mA 50 V 3-Pin SOT-346 2SC2412KT146Q

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.3mm
Length 3mm
Model 2SC2412KT146Q
Width 1.8mm
Mount Type Surface
Series 2SC2412K
Maximum Operating Temperature 150°C
Package Type SOT-346
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 120
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 150mA
Transistor Configuration Single
Maximum Transition Frequency ft 180MHz

Key Features

  • This transistor is designed for surface mount applications using the 3-pin SOT-346 package.
  • It features a maximum power dissipation of 200 mW suitable for low power switching and amplification.
  • High transition frequency of 180 MHz makes it ideal for high-frequency circuits.
  • It has minimum DC current gain (hFE) of 120 ensuring signal amplification efficiency.
  • The transistor supports a maximum operating temperature of 150°C for reliable performance.
  • Maximum collector-base voltage is 60 V, and emitter-base voltage is 7 V enabling robust operation.
  • The NPN polarity and single transistor configuration suit general purpose electronic circuit designs.
  • Lacks automotive standards compliance but is ideal for consumer and industrial electronics.

Product Description

ROHM 2SC2412KT146Q is a high-quality NPN bipolar small-signal transistor designed for use in electronic circuits where switching and amplification of low currents and voltages are required. It supports a maximum DC collector current of 150 mA and a collector-emitter voltage rating of 50 V, making it suitable for a broad range of low-power applications.

The transistor comes in a compact 3-pin SOT-346 surface-mount package that allows for space-saving PCB design. Its maximum power dissipation rating stands at 200 mW, ensuring it can handle moderate power without overheating.

This device features a minimum DC current gain (hFE) of 120, providing effective amplification, and operates reliably within a temperature range up to 150°C. The maximum collector-base voltage of 60 V and emitter-base voltage of 7 V add robustness to its performance, accommodating fluctuating signal conditions.

The 180 MHz transition frequency supports high-frequency switching applications, making it well suited for RF, signal processing, and other electronic circuit use cases. With precise dimensions (length 3 mm, width 1.8 mm, height 1.3 mm), the 2SC2412KT146Q is ideal for automated assembly lines and compact electronic device manufacturing.

This NPN transistor is perfect for industrial, consumer electronics, and communication equipment designs requiring reliable small-signal amplification. The surface mount package supports automated pick-and-place and soldering techniques, enhancing manufacturing efficiency.

While not certified for automotive standards, it remains reliable for numerous general-purpose electronic applications. ROHM's manufacturing quality ensures consistent transistor performance and longevity under specified operating conditions.

Explore more ROHM Bipolar Transistors and semiconductor products at EnvMart for your industrial and commercial electronics needs.

ROHM NPN Small-Signal Transistor 150 mA 50 V 3-Pin SOT-346 2SC2412KT146Q
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 50 V, allowing it to operate effectively in low-power applications.

This transistor can handle a maximum DC collector current of 150 mA, suitable for low-power switching and amplification tasks.

The transition frequency of this model is 180 MHz, making it suitable for high-frequency switching applications.

It comes in a 3-pin SOT-346 surface-mount package, which is designed for space-saving PCB layouts.

The maximum power dissipation for this transistor is rated at 200 mW, allowing it to manage moderate power levels without overheating.

The minimum DC current gain (hFE) for this model is 120, providing effective signal amplification.

This model can operate reliably at a maximum temperature of 150°C, ensuring consistent performance in various conditions.

The dimensions of this transistor are 3 mm in length, 1.8 mm in width, and 1.3 mm in height, making it compact for electronic designs.

This transistor uses a single configuration, suitable for general-purpose electronic circuit designs.

The maximum collector-base voltage (VCBO) is 60 V, and the maximum emitter-base voltage (VEBO) is 7 V, adding robustness to its operation.

This model is not certified for automotive standards but is suitable for consumer and industrial electronics applications.

It is ideal for low-power switching and amplification in industrial, consumer electronics, and communication equipment designs.

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