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STMicroelectronics Silicon Junction Switching Diode Single 8 A Maximum Forward Current 200 V Peak Reverse STTH802B-TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STTH802B-TR |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.05V |
| Peak Reverse Recovery Time trr | 17ns |
| Maximum Forward Current If | 8A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Designed for switching diode applications with silicon junction technology.
- Maximum forward current rating of 8 A supports moderate power requirements.
- Peak reverse repetitive voltage of 200 V ensures reliable blocking capability.
- Features a fast peak reverse recovery time of 17 nanoseconds for efficient switching.
- Low maximum forward voltage drop at 1.05 V enhances circuit efficiency.
- Wide operating temperature range from -65°C to 175°C for industrial use.
- Surface mount TO-252 package with 3 pins enables easy PCB integration.
- Compact dimensions approximately 6.6 mm length, 6.2 mm width, and 2.4 mm height.
Product Description
STMicroelectronics STTH802B-TR silicon junction switching diode is engineered to deliver dependable performance in electronic switching applications. Its 8 A maximum forward current and 200 V peak reverse voltage ratings make it suitable for use in power electronics and industrial circuits requiring efficient switching capability.
The diode utilizes silicon junction technology to provide a single configuration device housed in a compact TO-252 surface mount package, which supports automated PCB assembly. Its fast peak reverse recovery time of 17 nanoseconds enables higher switching frequencies with reduced power loss.
With a maximum forward voltage drop of just 1.05 V, the STTH802B-TR helps minimize conduction losses in circuits. It operates reliably in extreme temperature conditions ranging from -65°C to 175°C, making it ideal for rugged industrial environments and laboratory instrumentation.
Additional robustness is provided by the diode’s ability to handle peak non-repetitive forward surge current of up to 100 A, allowing it to sustain transient overloads without damage. While it does not have automotive standard certifications, it is well suited for a wide range of applications including power supplies, motor controls, and switching regulators.
The device measures approximately 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, making it a space-efficient component for compact electronics. The 3-pin TO-252 package facilitates surface mounting and effective heat dissipation in electronic assemblies.
Designed for silicon junction switching diode applications. Maximum forward current rating of 8 A. Peak reverse repetitive voltage of 200 V. Peak reverse recovery time of 17 ns supports fast switching. Maximum forward voltage of 1.05 V ensures efficient conduction.
Operating temperature range extends from -65°C to 175°C. Handles peak non-repetitive surge current of 100 A. Compact TO-252 surface mount package with 3 pins. Measures 6.6 mm x 6.2 mm x 2.4 mm. Suitable for industrial, laboratory, and manufacturing electronics.
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Frequently Asked Questions
The maximum forward current rating of this model is 8 A.
The peak reverse repetitive voltage for the STTH802B-TR is 200 V.
It features a fast peak reverse recovery time of 17 nanoseconds.
The maximum forward voltage drop is 1.05 V, which helps enhance circuit efficiency.
This model measures approximately 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The operating temperature range extends from -65°C to 175°C.
It is housed in a compact TO-252 surface mount package with 3 pins.
The diode can handle a peak non-repetitive forward surge current of up to 100 A.
It is suitable for power supplies, motor controls, and switching regulators.
The diode configuration for this model is single.
This model utilizes silicon junction technology for its operation.
The STTH802B-TR has a pin count of 3.
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