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| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.45mm |
| Length | 4.75mm |
| Model | SMBJ24A |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 38.9V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 26.7V |
| Maximum Reverse Stand-off Voltage Vwm | 24V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 15.4A |
| Maximum Reverse Leakage Current | 5μA |
Taiwan Semiconductor SMBJ24A is a new 1-element uni-directional transient voltage suppression (TVS) diode with a robust 600 W peak pulse power dissipation rating. Packaged in a compact 2-pin DO-214 surface mount package, this diode is designed to protect sensitive electronic circuits from transient voltage spikes by clamping and absorbing sudden surges.
The device features a single diode configuration oriented uni-directionally, providing effective ESD and surge protection. Its minimum breakdown voltage is 26.7 V, with a maximum reverse stand-off voltage of 24 V, suitable for protecting 24 V power lines and signal lines from transient voltage damage.
This TVS diode works efficiently at temperatures ranging from -55°C to 150°C, making it ideal for harsh industrial environments and automotive electronics where temperature durability is essential. The peak pulse current capability of 15.4 A ensures the device can handle high surge currents.
Physical dimensions are compact (4.75 mm length, 3.95 mm width, and 2.45 mm height), supporting high-density PCB layouts. The diode exhibits a low maximum reverse leakage current of 5 μA, minimizing power loss during normal operation.
The SMBJ24A conforms to FBI standards and is widely used in industrial electronics, power supply circuits, automotive electronic protection, communication equipment, and consumer electronics to safeguard devices from voltage transients.
Offers robust electrostatic discharge protection with a peak pulse power dissipation of 600 W. Features a single diode configuration in a uni-directional direction type. Operates reliably between -55°C and 150°C operating temperature range.
Designed with a compact DO-214 surface mount package for easy PCB integration. Has a minimum breakdown voltage of 26.7 V and a maximum reverse stand-off voltage of 24 V. Clamping voltage is rated at 38.9 V ensuring effective transient voltage suppression.
Maximum peak pulse current is 15.4 A with a low maximum reverse leakage current of 5 μA. Compact dimensions of 4.75 mm length, 3.95 mm width, and 2.45 mm height. Compliance with FBI standards and designed for SMT applications in industrial electronic circuits.
This TVS Diode from Taiwan Semiconductor is an excellent choice for engineers designing robust industrial, automotive, and consumer electronic systems requiring surge protection. Browse the Semiconductor category at EnvMart for compatible components and accessories.
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