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| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.15mm |
| Length | 4.75mm |
| Model | SMBJ5V0A |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 9.2V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 6.4V |
| Maximum Reverse Stand-off Voltage Vwm | 5V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 10mA |
| Maximum Peak Pulse Current Ippm | 65.2A |
| Maximum Reverse Leakage Current | 800μA |
Taiwan Semiconductor SMBJ5V0A 1-Element Uni-Directional TVS Diode offers a high peak pulse power capability of 600 W, providing reliable protection for electronic circuits from transient voltage spikes. Designed as a surface mount device in the DO-214 package with 2 pins, it features a single diode element with uni-directional suppression.
Its minimum breakdown voltage is 6.4 V, with a maximum reverse stand-off voltage of 5 V that safeguards circuits against overvoltage conditions. The diode clamps voltage at 9.2 V during transient events and supports a peak pulse current of 65.2 A, ensuring fast response and protection.
Operating across a temperature range from -55°C to 150°C, this diode is suitable for robust environments including industrial, commercial electronics, power supplies, and telecommunications equipment. The glass-passivated junction enhances durability, and low incremental surge resistance improves performance during surge events.
Physical dimensions of 4.75 mm length, 3.95 mm width, and 2.15 mm height make it compact for PCB layouts requiring space efficiency. The maximum reverse leakage current of 800 μA contributes to efficient energy handling and reduced power loss.
This diode is a surface mount, uni-directional protective component in the SMBJ series. It offers 600 W peak pulse power dissipation for effective transient voltage suppression. Reliable performance is ensured over a wide temperature range from -55°C to 150°C.
Compact DO-214 package and 2-pin configuration enable easy PCB integration. Glass-passivated junction provides enhanced protection and longevity. Low leakage current of 800 μA minimizes energy loss during operation. Ideal for use in industrial electronics, telecommunications, and power supplies.
Provides excellent clamping voltage of 9.2 V for circuit protection.
This Taiwan Semiconductor TVS diode SMBJ5V0A is an excellent choice for transient voltage suppression applications requiring durable, high-performance semiconductor protection. Explore more products in the TVS Diode category at EnvMart for additional circuit protection solutions.
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