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Microchip 1200 V 20 A Schottky Barrier Diode, Through Hole TO-247 MSC020SDA120B

Category Schottky Diode Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model MSC020SDA120B
Mount Type Through Hole
Series MSC0
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Maximum Continuous Forward Current If 20A
Peak Reverse Repetitive Voltage Vrrm 1200V
Rectifier Type Schottky
Peak Non-Repetitive Forward Surge Current Ifsm 75A
Maximum Forward Voltage Vf 1.8V

Key Features

  • The diode features low forward voltage drop of 1.8 V improving circuit efficiency.
  • Supports high peak non-repetitive forward surge current of 75 A ensuring robust transient performance.
  • Designed for through-hole mounting, facilitating easy PCB assembly.
  • Operates across a wide temperature range from -55°C to 175°C ensuring reliability in harsh conditions.
  • Complies with RoHS standards, ensuring environmental safety and sustainability.
  • Zero recovery silicon carbide schottky technology enables high switching frequency applications.
  • Exhibits low leakage current contributing to energy efficiency.
  • Avalanche-energy rated for enhanced durability and protection under transient conditions.

Product Description

Microchip MSC020SDA120B is a premium 1200 V, 20 A Schottky barrier diode housed in a durable TO-247 through-hole package designed for power electronics applications.

This diode features advanced zero recovery silicon carbide technology that reduces recovery times drastically, enabling high-frequency switching performance. Its low forward voltage drop of 1.8 V enhances efficiency by minimizing conduction losses, making it ideal for power supply, inverter, and power factor correction circuits.

With a peak reverse repetitive voltage of 1200 V and a high peak non-repetitive forward surge current of 75 A, it delivers exceptional reliability under demanding transient surge conditions. The diode can operate over an extensive temperature range of -55°C to 175°C, assuring consistent performance and durability in industrial environments.

Its RoHS compliance certifies its manufacture without hazardous substances, supporting environmentally friendly product development.

The device's robust construction and electrical characteristics make it well suited for applications such as power parallel diodes, switching power supplies, and automotive electronics, where fast switching and low losses are critical.

The diode supports through-hole mounting offering straightforward PCB integration. Low leakage current improves overall power system efficiency. Avalanche-energy rating ensures high transient energy absorption capacity for improved durability.

Microchip's MSC020SDA120B is an excellent component for industrial, automotive, electronic manufacturing, and power electronics sectors requiring efficient and reliable Schottky barriers. Explore more on EnvMart to find related semiconductor components and accessories for your projects.

Explore more products in our Schottky Diode category.

Microchip 1200 V 20 A Schottky Barrier Diode, Through Hole TO-247 MSC020SDA120B
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Frequently Asked Questions

The maximum reverse repetitive voltage rating of this diode is 1200 V.

It can handle a peak non-repetitive forward surge current of 75 A.

The forward voltage drop is 1.8 V, which helps improve circuit efficiency.

This diode operates over a wide temperature range from -55°C to 175°C.

It is designed for through-hole mounting, facilitating easy PCB assembly.

Yes, it complies with RoHS standards, ensuring it is manufactured without hazardous substances.

The diode is housed in a TO-247 package type.

It is a Schottky type rectifier, known for its low forward voltage drop and fast switching capabilities.

It is suitable for applications such as power supplies, inverters, and automotive electronics where efficiency and fast switching are critical.

The maximum continuous forward current is rated at 20 A.

It utilizes zero recovery silicon carbide technology, which enables high-frequency switching performance.

The country of origin for this diode is India.

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