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STMicroelectronics Type N-Channel IGBT 50 A 650 V 3-Pin TO-247 LL Through Hole STGWA30HP65FB2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGWA30HP65FB2 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 LL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 167W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This IGBT features a maximum power dissipation of 167 W ensuring efficient thermal management.
- Designed with a trench gate field-stop structure for high-speed switching up to 1 MHz.
- Max gate emitter voltage rating of ±30 V ensures reliable gate drive operation.
- Collector emitter saturation voltage of 2.1 V minimizes conduction losses.
- Operating temperature range from -55°C to 175°C for robust industrial performance.
- Compact dimensions of 15.9 mm length, 21.1 mm width, and 5.1 mm height support versatile PCB mounting.
- Complies with RoHS standards for environmental safety.
- Suitable for industrial, automotive, and power electronics applications where high current and voltage switching is required.
Product Description
STMicroelectronics STGWA30HP65FB2 Type N-Channel IGBT offers a reliable and high-performance solution for power switching applications. This discrete semiconductor device features a maximum continuous collector current of 50 A and a collector emitter voltage rating of 650 V, housed in a 3-pin TO-247 LL package with long leads suitable for through-hole mounting.
The trench gate field-stop technology provides minimized tail current and tight parameter distribution, enhancing switching efficiency and reliability. It supports high-speed switching frequencies up to 1 MHz, making it ideal for high-frequency power conversion and industrial electronics.
Designed to operate within a temperature range of -55°C to 175°C, this IGBT ensures stable performance under demanding thermal conditions. Its maximum power dissipation of 167 W facilitates effective heat management, vital for sustained operation in power control systems.
Additional features include a maximum gate emitter voltage of ±30 V and a collector emitter saturation voltage of 2.1 V, contributing to reduced conduction losses and improved overall efficiency.
The compact form factor with precise dimensions (15.9 mm length, 21.1 mm width, 5.1 mm height) supports easy integration into electronic assemblies. Compliance with RoHS directives confirms its environmentally friendly design.
This device is commonly used in industrial automation, motor control, power supply circuits, and renewable energy systems. The TO-247 LL package provides excellent thermal resistance and mechanical strength for demanding applications.
Through hole mounting enables robust mechanical connection under vibration and thermal cycling. STMicroelectronics' STG series assures quality, reliability, and widespread industry acceptance. Explore the comprehensive product range of STMicroelectronics at EnvMart for advanced electronic components engineered to deliver superior performance and durability.
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Frequently Asked Questions
The maximum continuous collector current for this model is 50 A.
It has a maximum collector emitter voltage rating of 650 V.
This IGBT features a maximum power dissipation of 167 W, which supports efficient thermal management.
The operating temperature range for this IGBT is from -55°C to 175°C.
The collector emitter saturation voltage for this unit is 2.1 V, which helps minimize conduction losses.
It supports through hole mounting, which allows for a robust mechanical connection.
The dimensions are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.
The maximum gate emitter voltage rating is ±30 V, ensuring reliable gate drive operation.
This model is suitable for industrial, automotive, and power electronics applications that require high current and voltage switching.
It features trench gate field-stop technology, which enhances switching efficiency and reliability.
It complies with RoHS standards for environmental safety.
This IGBT has a pin count of 3.
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