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ROHM Type N-Channel MOSFET 14A 1200V Enhancement TO-247N SCT2280KEHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SCT2280KEHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 108W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4V |
Key Features
- Supports a maximum continuous drain current of 14A for demanding power applications.
- Handles up to 1200V drain-source voltage, suitable for high-voltage circuits.
- Features enhancement mode for efficient switching and energy management.
- TO-247N package enables secure through-hole mounting and thermal dissipation.
- Low on-state resistance of 280mΩ improves efficiency by minimizing losses.
- Fast switching speed ideal for solar inverters, DC/DC converters, motor drives, and induction heating systems.
Product Description
ROHM SCT2280KEHRC11 N-Channel MOSFET is a high-performance discrete semiconductor engineered for demanding industrial and power electronics environments. This enhancement mode device features a maximum continuous drain current of 14A and a drain-source voltage rating of 1200V, making it ideal for circuits where efficiency and high voltage handling are critical.
The TO-247N package ensures robust, through-hole mounting and optimized heat dissipation, crucial in applications such as solar inverters, power supplies, DC/DC converters, induction heating, and motor drives. The device’s low on-state resistance of just 280mΩ contributes to operational efficiency, while fast switching characteristics help reduce energy losses during high-speed operation.
Supports a maximum continuous drain current of 14A for demanding power applications. Handles up to 1200V drain-source voltage, suitable for high-voltage circuits. Features enhancement mode for efficient switching and energy management.
TO-247N package enables secure through-hole mounting and thermal dissipation. Low on-state resistance of 280mΩ improves efficiency by minimizing losses. Fast switching speed ideal for solar inverters, DC/DC converters, motor drives, and induction heating systems.
Typical gate charge is 36nC @ Vgs, enabling reliable control in complex electronic architectures. Maximum power dissipation is rated at 108W, and the device operates over a wide temperature range from -55°C to +175°C. Its three-pin configuration streamlines integration into PCB assemblies.
Suitable for industrial power management, renewable energy projects, laboratory electronics, manufacturing automation, and commercial installations, the SCT2280KEHRC11 offers performance and reliability backed by ROHM’s expertise in semiconductor technology. This device is Pb-free and RoHS compliant, supporting green and efficient designs.
For professionals in electronics design, laboratory equipment, HVAC power control, and renewable energy inverters, the SCT2280KEHRC11 provides a dependable solution for high-current, high-voltage switching.
Discover more MOSFETs and advanced semiconductor solutions from ROHM in EnvMart’s Electronics & Electricals category for reliable and efficient circuit integration.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14A, making it suitable for demanding power applications.
This device can handle a maximum drain-source voltage of 1200V, which is ideal for high-voltage circuits.
The SCT2280KEHRC11 comes in a TO-247N package type, which allows for secure through-hole mounting and effective thermal dissipation.
The on-state resistance of this model is 280mΩ, which helps improve efficiency by minimizing power losses.
The typical gate charge at Vgs for this MOSFET is 36nC, enabling reliable control in various electronic applications.
This model has a maximum power dissipation rating of 108W, allowing it to operate effectively under high power conditions.
The operating temperature range for this device is from -55°C to 175°C, making it suitable for various environmental conditions.
This MOSFET features a three-pin configuration, which simplifies integration into PCB assemblies.
This model is ideal for applications such as solar inverters, DC/DC converters, motor drives, and induction heating systems.
The SCT2280KEHRC11 features an N-channel type, which is beneficial for efficient switching in power electronics.
The maximum gate-source voltage for this MOSFET is 22V, ensuring compatibility with a range of control signals.
Yes, the SCT2280KEHRC11 is Pb-free and RoHS compliant, supporting environmentally friendly designs.
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