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ROHM Type N-Channel MOSFET 7A 650V Enhancement 3-Pin TO-252 R6507KND3TL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 10.4mm |
| Length | 6.4mm |
| Model | R6507KND3TL1 |
| Width | 2.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS compliant |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 665mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- N-channel enhancement mode MOSFET suitable for power switching.
- Maximum drain current of 7A and drain-source voltage of 650V.
- TO-252 surface mount package with 3 pins for compact PCB design.
- Ultra-fast switching speed and low on-resistance for high efficiency.
- Supports maximum gate-source voltage of 20V and power dissipation up to 78W.
- Operates in ambient temperatures from -55°C up to 150°C.
- RoHS compliant and features Pb-free plating for environmental sustainability.
Product Description
ROHM R6507KND3TL1 Type N-Channel MOSFET is engineered for efficient, high-speed switching applications in power supplies, PFC, and LLC circuits. Designed with an enhancement channel mode, this component ensures improved switching efficiency while delivering robust performance across a wide range of operating conditions.
The device supports a maximum continuous drain current of 7A and withstands a maximum drain-source voltage of 650V, offering flexibility for demanding load scenarios. Housed in a compact TO-252 surface mount package with three pins, it is optimized for automated PCB assembly and space-limited applications.
N-channel enhancement MOSFET for power management and switching circuits. Maximum drain current of 7A, suitable for medium power loads. 650V drain-source voltage allows operation in high-voltage environments. Ultra-fast switching speed and low on-resistance (665mΩ) enhance efficiency.
Supports gate-source voltages up to 20V. Package dimensions: 6.4mm (L) x 2.4mm (W) x 10.4mm (H). Wide operating temperature range from -55°C to 150°C. Maximum power dissipation up to 78W. Environmentally friendly: RoHS compliant, Pb-free plating.
This MOSFET integrates seamlessly into industrial, laboratory, and commercial electronics, supporting efficient management of switching loads, power conversion, and energy optimization tasks. Ideal for use in power supply modules, LED drivers, robotics, control systems, and renewable energy products. Parallel use is simplified by its electrical characteristics.
Common industrial applications include power factor correction stages (PFC), LLC converters, and other advanced circuit topologies needing fast, reliable switching. The robust construction ensures longevity and consistent performance even under extended thermal and electrical stress.
Explore the EnvMart selection for more ROHM MOSFETs and advanced semiconductor solutions to enhance your next electronic design project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7A.
It can withstand a maximum drain-source voltage of 650V.
The TO-252 package dimensions are 6.4mm in length, 2.4mm in width, and 10.4mm in height.
This MOSFET supports a maximum power dissipation of up to 78W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage supported is 20V.
The maximum drain-source resistance is 665mΩ.
This model features an N-channel enhancement mode.
Yes, this MOSFET is RoHS compliant and features Pb-free plating.
It is suitable for power management in applications like power supplies, PFC, and LLC circuits.
The TO-252 package has 3 pins.
The country of origin for this MOSFET is India.
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