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onsemi PNP Bipolar Power Transistor MJL4302AG -15A, -350V, 230W, TO-3BPL Package
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 37.8mm |
| Length | 20.3mm |
| Model | MJL4302AG |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3BPL |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -350V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 350V |
| Maximum Power Dissipation Pd | 230W |
| Maximum DC Collector Current Idc | -15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 35MHz |
| Magnatec 2SA1302-0 PNP Bipolar Transistor, 15 A, 200 V, 3-Pin TO-264Brand | Magnatec |
Key Features
- High-performance PNP bipolar transistor suitable for industrial power applications.
- Maximum DC collector current of -15A for robust current handling.
- Rated collector-emitter voltage up to -350V for high voltage circuits.
- Maximum power dissipation of 230W supports reliable performance under load.
- TO-3BPL package provides secure through-hole mounting.
- Single transistor configuration optimized for discrete and amplifier use.
- Wide operating temperature range from -65°C to 150°C.
- Minimum DC current gain of 10 ensures stable amplification.
Product Description
The onsemi MJL4302AG is a high-performance PNP bipolar power transistor designed for industrial and commercial power electronics applications. This device features a maximum DC collector current of -15A and a collector-emitter voltage rating of -350V, providing ample capacity for high-power and high-voltage circuit requirements. Housed in a durable TO-3BPL package, it offers robust through-hole mounting for reliable integration into printed circuit boards.
With a maximum power dissipation of 230W, the MJL4302AG can operate safely at elevated power levels, making it well-suited for audio amplifiers, motor drive circuits, industrial controls, and other demanding environments. The single-transistor configuration is ideal for discrete circuit designs, and its PNP polarity allows versatility in complementary pair applications alongside NPN devices.
The transistor delivers a minimum DC current gain (hFE) of 10, supporting stable and consistent performance. It operates across a wide temperature range from -65°C to 150°C, providing the resilience needed for both laboratory and field installations. Maximum collector base voltage is 350V, while emitter base voltage is 5V, further reinforcing suitability for high-voltage power supply architectures.
Its compact dimensions (length 20.3mm, width 5.3mm, height 37.8mm) facilitate efficient PCB layout and thermal management. The device also features a maximum transition frequency of 35MHz, enabling fast switching in electronic circuits.
Applications include industrial automation, power amplifiers, energy conversion systems, laboratory equipment, and commercial electronics. The TO-3BPL mount supports machine insertion for production efficiency and minimizes mechanical stress during operation.
Visit the Bipolar Transistor category for more high-current and high-voltage switching devices from onsemi and other trusted brands.
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Frequently Asked Questions
The maximum DC collector current for this model is -15A, allowing for robust current handling in power applications.
It has a collector-emitter voltage rating of -350V, making it suitable for high-voltage circuits.
The maximum power dissipation is 230W, supporting reliable performance under load conditions.
This model is housed in a TO-3BPL package, which provides secure through-hole mounting for integration into circuits.
It operates across a wide temperature range from -65°C to 150°C, suitable for various environments.
The minimum DC current gain (hFE) is 10, ensuring stable amplification in applications.
The dimensions are 20.3mm in length, 5.3mm in width, and 37.8mm in height, facilitating efficient PCB layout.
The maximum transition frequency is 35MHz, enabling fast switching capabilities in electronic circuits.
This model is suitable for applications such as audio amplifiers, motor drive circuits, and industrial controls.
The transistor has a pin count of 3, typical for its configuration.
The maximum emitter base voltage (VEBO) is 5V, reinforcing its suitability for high-voltage applications.
It features a single transistor configuration, optimized for discrete and amplifier use.
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