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Infineon Gate Driver 2 Drivers 8-Pin DSO-8 Package -414.2 mA Output Current 25 V 2ED2108S06FXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 2ED2108S06FXUMA1 |
| Series | 2ED2108S6F |
| Output Current | -414.2mA |
| Maximum Operating Temperature | 125°C |
| Package Type | DSO-8 |
| Minimum Operating Temperature | -40°C |
| Rise Time | 200ns |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Maximum Supply Voltage | 25V |
| Minimum Supply Voltage | 650V |
| Number of Drivers | 2 |
| Fall Time | 80ns |
Key Features
- Output current of minus 414.2 mA enables efficient gate driving.
- Features an 8-pin DSO-8 package for compact PCB integration.
- Rise time is 200 ns and fall time is 80 ns for fast switching.
- Operates between -40°C and 125°C for reliable thermal performance.
- Minimum supply voltage rated at 6.5 V with a maximum of 25 V.
- Integrated with Infineon Thin-Film-Silicon on Insulator (SOI) technology.
- Includes internal 540 ns dead time, programmable up to 5 µs externally.
- Separates high and low voltage pins for maximum creepage and clearance (DSO-8 version).
Product Description
Infineon 2ED2108S06FXUMA1 gate driver is a highly specialized power management IC incorporating two drive channels in an 8-pin DSO-8 package, designed for efficient half-bridge gate driving with integrated bootstrap diode. The device delivers an output current of -414.2 mA, allowing swift and effective switching in industrial, automotive, and electronic systems.
This gate driver features Infineon's advanced Thin-Film-Silicon on Insulator (SOI) technology which enhances performance with integrated interlocking and programmable dead time options, improving device protection and reliability in demanding environments. The internal dead time default is 540 ns and can be adjusted externally up to 5 µs.
The device supports a wide operating voltage range from 6.5 V minimum to a maximum of 25 V, with fast rise and fall times of 200 ns and 80 ns respectively, supporting high-frequency operation. Its robust thermal rating allows operation between -40°C and 125°C, suitable for harsh industrial applications.
The design includes separate high and low voltage pins to maximize creepage and clearance distances, enhancing safety and reducing risk of electrical breakdown. Logic and power ground separation improves noise immunity and operational stability.
This component conforms to RoHS standards, ensuring compliance with environmental regulations. It is well suited for industrial, manufacturing, power management, and electronic component integration where efficient gate driving is essential.
Output current of minus 414.2 mA enables efficient gate driving. Features an 8-pin DSO-8 package for compact PCB integration. Rise time is 200 ns and fall time is 80 ns for fast switching. Operating temperature range of -40°C to 125°C ensures reliability.
Minimum and maximum supply voltages of 6.5 V and 25 V support varied applications. Integrated SOI technology and programmable dead time enhance performance. Separate high/low voltage pins for maximum creepage and clearance.
Suitable for industrial, electronic, and power management systems. Explore additional Infineon power management ICs at EnvMart for extensive technical solutions across industrial and commercial applications.
Explore more products in our Gate Drivers category.
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Frequently Asked Questions
The output current of this gate driver is -414.2 mA, enabling efficient gate driving for various applications.
It operates within a temperature range of -40°C to 125°C, ensuring reliability in harsh environments.
The rise time is 200 ns and the fall time is 80 ns, allowing for fast switching capabilities.
The minimum supply voltage is 6.5 V, while the maximum supply voltage is 25 V, accommodating a variety of applications.
This model includes two drivers, making it suitable for half-bridge gate driving applications.
It comes in an 8-pin DSO-8 package, designed for compact PCB integration.
It features Infineon's Thin-Film-Silicon on Insulator (SOI) technology, enhancing performance and reliability.
The internal dead time is set at 540 ns and can be programmed externally up to 5 µs.
This gate driver conforms to RoHS standards, ensuring compliance with environmental regulations.
The separate high and low voltage pins maximize creepage and clearance distances, enhancing safety and reducing electrical breakdown risk.
It is well suited for industrial, automotive, and electronic systems where efficient gate driving is essential.
The country of origin for this gate driver is India.
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