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ROHM Transistor, 7 A NPN Power Transistor, 50 V Collector Emitter Voltage, TO-252 DPAK Surface Mount 2SCR583D3TL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.4mm |
| Length | 6.8mm |
| Model | 2SCR583D3TL1 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | 2SCR583D |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 10W |
| Maximum DC Collector Current Idc | 7A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 280MHz |
Key Features
- Maximum DC collector current of 7 A to handle significant load currents.
- Collector-emitter voltage rating of 50 V suitable for medium voltage operations.
- Surface mount TO-252 (DPAK) package ensures compact PCB mounting.
- High power dissipation capability of 10 W for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Minimum DC current gain (hFE) of 180 for effective amplification.
- Maximum transition frequency (ft) of 280 MHz for moderate frequency switching.
- Three-pin configuration optimized for power driver circuits.
Product Description
ROHM 2SCR583D3TL1 is a high-performance NPN power transistor packaged in a TO-252 (DPAK) surface mount form factor.
It supports a maximum DC collector current of 7 A and a maximum collector-emitter voltage of 50 V, making it suitable for low frequency amplifier and power driver applications in industrial, automotive, and consumer electronics.
The device dissipates power up to 10 W and operates reliably in extreme environments with temperatures ranging from -55°C to 150°C. This transistor features a minimum DC current gain (hFE) of 180 and a maximum transition frequency of 280 MHz, providing a balance of power and switching speed performance.
Its 3-pin design enables easy integration onto printed circuit boards using surface mount technology. Maximum DC collector current of 7 A. Maximum collector-emitter voltage of 50 V. TO-252 (DPAK) surface mount package. Power dissipation capacity of 10 W.
Wide operating temperature from -55°C to 150°C. Minimum DC current gain (hFE) of 180. Maximum transition frequency of 280 MHz. NPN transistor polarity. Complementary PNP type 2SAR583D3 available.
This power transistor is ideal for electronic component applications in power amplification, switching, and control circuits in manufacturing, automotive electronics, and general industrial devices.
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Frequently Asked Questions
The maximum DC collector current for this transistor is 7 A, allowing it to handle significant load currents.
This model has a maximum collector-emitter voltage rating of 50 V, making it suitable for medium voltage operations.
It is packaged in a TO-252 (DPAK) surface mount format, which ensures compact PCB mounting.
The transistor can dissipate power up to 10 W, ensuring reliable thermal performance.
It operates reliably within a wide temperature range from -55°C to 150°C, suitable for harsh environments.
The minimum DC current gain (hFE) is 180, providing effective amplification.
The maximum transition frequency for this transistor is 280 MHz, suitable for moderate frequency switching.
This model features a 3-pin configuration, optimized for power driver circuits.
The maximum emitter-base voltage (VEBO) is 6 V, and the maximum collector-base voltage (VCBO) is 50 V.
This is an NPN power transistor, which is commonly used in power amplification and switching applications.
It is suitable for low frequency amplifier and power driver applications in industrial, automotive, and consumer electronics.
The dimensions of this model are 2.4 mm in height, 6.8 mm in length, and 10.4 mm in width.
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