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onsemi 2-Element Uni-Directional TVS Diode 150W, 3-Pin SOT-323 DF3A6.8FUT1G

Category TVS Diode Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 0.9mm
Length 2.2mm
Model DF3A6.8FUT1G
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Number of Elements per Chip 2
Clamping Voltage VC 16V
Diode Configuration Common Anode
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 7.2V
Maximum Reverse Stand-off Voltage Vwm 5V
Peak Pulse Power Dissipation Pppm 150W
Test Current It 5mA
Maximum Peak Pulse Current Ippm 9.37A
Maximum Reverse Leakage Current 500nA

Key Features

  • The diode features a common anode configuration for efficient circuit protection.
  • It supports a minimum breakdown voltage of 7.2V and clamping voltage of 16V.
  • Designed for surface mount applications with a compact SOT-323 package type.
  • Operates reliably between -55°C and 150°C for a wide range of environments.
  • Maximum peak pulse current is 9.37A, ensuring robust transient voltage suppression.
  • Incorporates electrostatic discharge (ESD) protection to safeguard sensitive electronics.
  • Constructed with 2 elements per chip to enhance performance and durability.
  • Maximum reverse leakage current of 500nA minimizes power loss during normal operation.

Product Description

onsemi DF3A6.8FUT1G is a 2-element Uni-Directional TVS diode designed for transient voltage suppression with a peak pulse power dissipation of 150W. Housed in a compact 3-pin SOT-323 surface mount package, it provides efficient electrostatic discharge (ESD) protection for sensitive electronic circuits.

This diode features a common anode configuration, a minimum breakdown voltage of 7.2V, and a maximum reverse stand-off voltage of 5V. Its clamping voltage is rated at 16V, allowing it to clamp transient voltages effectively during voltage spikes.

Operating temperature ranges from -55°C to 150°C, making it suitable for harsh industrial and commercial electronic applications. The device supports a maximum peak pulse current of 9.37A and a test current of 5mA. Its maximum reverse leakage current is low, at 500nA, ensuring minimal leakage and energy efficiency.

With physical dimensions of 2.2mm length, 1.35mm width, and 0.9mm height, this TVS diode fits well on high-density printed circuit boards (PCBs). It is ideal for use in transient voltage suppression in power and signal lines to protect semiconductor devices.

The DF3A6.8FUT1G diode is an essential component for industrial electronics, manufacturing equipment, telecommunications, and other fields requiring ESD protection and transient voltage control.

The diode features a common anode configuration for efficient circuit protection. It supports a minimum breakdown voltage of 7.2V and clamping voltage of 16V. Designed for surface mount applications with a compact SOT-323 package type.

Operates reliably between -55°C and 150°C for a wide range of environments. Maximum peak pulse current is 9.37A, ensuring robust transient voltage suppression. Incorporates electrostatic discharge (ESD) protection to safeguard sensitive electronics.

Constructed with 2 elements per chip to enhance performance and durability. Compact dimensions: length 2.2mm, width 1.35mm, and height 0.9mm, suitable for dense PCB layouts. Maximum reverse leakage current of 500nA minimizes power loss during normal operation.

Manufactured in China under new product condition, ensuring quality and reliability. Explore more TVS Diode options and semiconductor components for your industrial, telecommunications, and manufacturing needs within our extensive EnvMart catalog.

onsemi 2-Element Uni-Directional TVS Diode 150W, 3-Pin SOT-323 DF3A6.8FUT1G
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Frequently Asked Questions

The maximum peak pulse power dissipation of this diode is 150W.

The clamping voltage of the DF3A6.8FUT1G is rated at 16V.

This model has a minimum breakdown voltage of 7.2V.

The SOT-323 package dimensions are 2.2mm in length, 1.35mm in width, and 0.9mm in height.

It operates reliably between -55°C and 150°C.

This diode features a common anode configuration.

The maximum reverse leakage current is 500nA.

There are 2 elements per chip in this diode.

The maximum peak pulse current is 9.37A.

The test current for this diode is 5mA.

This TVS diode is suitable for transient voltage suppression in power and signal lines to protect semiconductor devices.

It is manufactured in China.

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