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Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin DFN1412D-3 PDTC124EQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC124EQC-QZ
Mount Type Surface
Series PDTC124E
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Capable of handling up to 100 mA collector current.
  • Maximum collector emitter voltage rating of 50 V.
  • Compact 3-pin DFN1412D-3 surface mount package.
  • Built-in resistors simplify circuit design and reduce component count.
  • Suitable for automatic optical inspection due to low 0.5 mm package height.
  • Wide operating temperature range from -55°C to 150°C.
  • High transition frequency of up to 230 MHz for fast switching applications.
  • Ideal for controlling IC inputs and switching loads in digital applications.

Product Description

Nexperia PDTC124EQC-QZ is a resistor-equipped NPN transistor designed for compact and efficient digital circuit applications. It combines an NPN transistor with integrated resistors within a low-profile 3-pin DFN1412D-3 surface-mounted package, offering a collector current capacity of 100 mA and a collector emitter voltage rating of 50 V.

The device features a maximum collector base voltage and collector emitter voltage both rated at 50 V, a minimum DC current gain of 60, and a maximum emitter base voltage of 10 V. It operates reliably over a wide temperature range from -55°C to 150°C and supports a high transition frequency of 230 MHz.

Designed to reduce component count and simplify circuit designs, this transistor is tailored for automatic optical inspection due to its low 0.5 mm package height with side-wettable flanks. The built-in resistors provide a cost-effective alternative to traditional bipolar transistors, suitable for switching loads and controlling IC inputs in digital electronics.

It complies with RoHS and is qualified to AEC-Q101 automotive standards, making it suitable for automotive and other industrial applications where high reliability and performance are required.

Capable of handling up to 100 mA collector current. Maximum collector emitter voltage rating of 50 V. Compact 3-pin DFN1412D-3 surface mount package. Built-in resistors simplify circuit design and reduce component count.

Suitable for automatic optical inspection due to low 0.5 mm package height. Wide operating temperature range from -55°C to 150°C. High transition frequency of up to 230 MHz for fast switching applications. Ideal for controlling IC inputs and switching loads in digital applications.

Complies with RoHS and AEC-Q101 automotive standards.

This resistor-equipped transistor is suitable for industrial, automotive, manufacturing, and electronic equipment applications, where compact size, integration, and reliability are paramount. Explore other Nexperia Bipolar Transistors and electronic components at EnvMart.

Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin DFN1412D-3 PDTC124EQC-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This transistor has a maximum collector-emitter voltage rating of 50 V.

It comes in a compact 3-pin DFN1412D-3 surface mount package.

The operating temperature range is from -55°C to 150°C.

The maximum transition frequency is up to 230 MHz, suitable for fast switching applications.

Yes, it complies with RoHS and is qualified to AEC-Q101 automotive standards.

The minimum DC current gain (hFE) is 60.

The maximum emitter-base voltage (VEBO) is 10 V.

It is suitable for industrial, automotive, manufacturing, and electronic equipment applications.

The built-in resistors simplify circuit design and reduce component count.

The country of origin for this model is India.

This model is configured as an NPN transistor.

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