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Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin DFN1412D-3 PDTC114YQCZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC114YQCZ
Mount Type Surface
Series PDTC114Y
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Offers a maximum DC collector current of 100 mA for reliable operation.
  • Supports a maximum collector-emitter voltage of 50 V for robust switching.
  • Packaged in ultra-small 3-Pin DFN1412D-3 surface mount device with low profile.
  • Features built-in resistors simplifying circuit design and reducing component count.
  • Operates reliably over a temperature range from -55°C to 150°C.
  • Provides a maximum transition frequency of 230 MHz suitable for high-speed digital switching.
  • Compliance with RoHS standards and automotive standard AEC-Q101 ensures quality and safety.
  • Designed for digital applications including controlling IC inputs and switching loads.

Product Description

Nexperia PDTC114YQCZ is a resistor-equipped NPN bipolar transistor designed for compact and cost-effective digital switching applications. It supports a maximum DC collector current of 100 mA and can handle a collector-emitter voltage up to 50 V. The transistor is housed in a low-profile 3-pin DFN1412D-3 surface mount plastic package with side-wettable flanks, enabling easy PCB assembly and automatic optical inspection.

This device integrates resistors internally, significantly simplifying circuit designs by reducing the number of external components required and lowering pick-and-place assembly costs. Its ultra-small form factor with a package height of only 0.5 mm makes it well-suited for space-constrained electronic equipment.

The PDTC114YQCZ transistor operates reliably across a broad temperature range from -55°C to +150°C, meeting the demanding requirements of automotive applications as it complies with the AEC-Q101 automotive qualification standard. The transistor offers a maximum transition frequency of 230 MHz, ensuring efficient high-frequency switching performance in digital circuits.

Typical applications include controlling input stages for integrated circuits and switching loads in electronic devices. RoHS compliance guarantees environmental safety and ease of use in modern electronic manufacturing.

Maximum DC collector current: 100 mA. Maximum collector-emitter voltage: 50 V. Package type: DFN1412D-3, surface mount device. Built-in resistors reduce external component count and design complexity. Wide operating temperature from -55°C to 150°C.

High transition frequency of 230 MHz suitable for digital switching. Compliance with RoHS and automotive AEC-Q101 standards.

Suitable for industrial, automotive, laboratory, and consumer electronics digital switching applications that require small, efficient, and reliable transistor solutions. Explore more transistor and semiconductor products at EnvMart for your electronic design and manufacturing needs.

Explore more products in our Bipolar Transistors category.

Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin DFN1412D-3 PDTC114YQCZ
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It can handle a maximum collector-emitter voltage of 50 V.

This transistor is packaged in a DFN1412D-3 surface mount device.

It operates reliably over a temperature range from -55°C to +150°C.

The maximum transition frequency is 230 MHz, suitable for high-speed digital switching.

Yes, it complies with the automotive standard AEC-Q101.

It is an NPN bipolar transistor.

It features built-in resistors that simplify circuit design and reduce the number of external components required.

The minimum DC current gain (hFE) is 100.

The maximum emitter-base voltage (VEBO) is 6 V.

It is suitable for digital applications such as controlling IC inputs and switching loads in electronic devices.

The country of origin for this transistor is India.

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