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onsemi 2-Element Bi-Directional TVS Diode, 350 W, 3-Pin SOT-23 NUP1105LT1G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NUP1105LT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 2 |
| Clamping Voltage VC | 40V |
| Automotive Standard | AEC-Q101 |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 25.7V |
| Peak Pulse Power Dissipation Pppm | 350W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 8A |
| Maximum Reverse Leakage Current | 100nA |
Key Features
- Bi-directional protection for data lines and transceivers.
- 350 W peak pulse power dissipation per line.
- Low reverse leakage current below 100 nA.
- Wide operating temperature range from -55°C to 150°C.
- Compact 3-pin SOT-23 surface mount package.
- Clamping voltage of 40 V to prevent voltage spikes.
- AEC-Q101 automotive standard compliance.
- Designed for LIN and single line CAN bus transceiver protection.
Product Description
onsemi NUP1105LT1G is a 2-element bi-directional Transient Voltage Suppressor (TVS) diode optimized for protecting LIN and CAN transceivers from electrostatic discharge (ESD) and other surge events. This device features a compact 3-pin SOT-23 surface-mount package ideal for space-constrained circuit designs.
It provides robust protection with a peak pulse power dissipation of 350 W (measured using an 8 x 20 microseconds waveform) for each line, ensuring system reliability even during high-energy transients. The diode exhibits a low reverse leakage current of less than 100 nA, reducing power loss and enhancing overall device efficiency.
Rated for operation between -55°C and 150°C, the NUP1105LT1G withstands extreme thermal environments common in automotive, industrial, and commercial electronics. The clamping voltage of 40 V effectively limits voltage spikes, protecting sensitive components downstream.
The device complies with the automotive standard AEC-Q101, attesting to its suitability for automotive electronics requiring rigorous quality assurance and reliability.
Applications include surge and ESD protection for automotive LIN and CAN bus lines, industrial equipment, and communication interfaces. Its small size and surface mount package allow for streamlined PCB layouts with minimal space usage.
Bi-directional transient voltage suppression for data and signal lines. High peak pulse power rating of 350 W per line. Low leakage current enhances energy efficiency. Wide operating temperature range from -55°C to 150°C.
Compact, low-profile SOT-23 package ideal for space-limited designs. Conforms to automotive quality standard AEC-Q101. Specialized use for LIN and single line CAN transceiver protection.
This product is part of a broad category of semiconductor TVS diodes used extensively in electronics, automotive, telecommunications, and industrial domains to guard against voltage spikes due to ESD and surges, thus enhancing device longevity and system stability.
Explore more on semi-conductors and TVS Diodes at EnvMart for compatible components and accessories.
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Frequently Asked Questions
The peak pulse power dissipation of this model is 350 W per line, measured using an 8 x 20 microseconds waveform.
The clamping voltage for the NUP1105LT1G is 40 V, which helps limit voltage spikes and protect sensitive components.
This model operates within a temperature range of -55°C to 150°C, making it suitable for various thermal environments.
It comes in a compact 3-pin SOT-23 surface mount package, ideal for space-constrained circuit designs.
The maximum reverse leakage current for the NUP1105LT1G is less than 100 nA, which enhances energy efficiency.
This model features 2 elements per chip, providing bi-directional transient voltage suppression.
The diode complies with the AEC-Q101 automotive standard, ensuring quality assurance for automotive applications.
The minimum breakdown voltage (Vbr) of the NUP1105LT1G is 25.7 V, providing effective protection against voltage surges.
The maximum peak pulse current for the NUP1105LT1G is 8 A, allowing it to withstand high-energy transients.
This model is designed for surge and ESD protection for automotive LIN and CAN bus lines, as well as industrial equipment and communication interfaces.
The height of this model is 1.01 mm and the width is 1.4 mm, making it suitable for compact designs.
The test current (It) for this diode is 1 mA, which is used for its characterization during testing.
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