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Nexperia PNP Bipolar Transistor BC857BW,115 100 mA, 45 V, 3-Pin SOT-323 Surface Mount BC857BW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 0.95mm
Length 2mm
Model BC857BW,115
Width 1.25mm
Mount Type Surface
Series BC857W
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
onsemi BC857BWT1G Transistor, -100 mA PNP, -45 V, 3-Pin SOT-323Brand onsemi

Key Features

  • This transistor is configured as a single PNP type for general purpose switching and amplification.
  • The device supports a maximum power dissipation of 200 mW for reliable operation.
  • It provides a minimum DC current gain (hFE) of 220 for efficient signal amplification.
  • Operating temperature ranges from -65°C minimum to a maximum of 150°C suitable for various industrial environments.
  • The compact package dimensions are 2 mm length, 1.25 mm width, and 0.95 mm height for space-saving layouts.
  • Designed to meet the automotive standard AEC-Q101 for enhanced quality and reliability.
  • Mount type is surface mount, compatible with modern PCB assembly processes.

Product Description

The Nexperia BC857BW,115 is a PNP bipolar transistor designed primarily for surface mount applications using the compact 3-pin SOT-323 package. It is ideal for signal amplification and switching functions in a variety of electronic circuits. The transistor supports a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage of up to 45 V, making it suitable for low power applications.

This single transistor configuration provides a reliable minimum DC current gain (hFE) of 220 to ensure efficient amplification performance. It dissipates up to 200 mW of power safely, allowing operation in moderately demanding environments.

The operating temperature range is robust, spanning from -65°C to 150°C, accommodating both industrial and automotive environments. Furthermore, this device adheres to the stringent automotive standard AEC-Q101, ensuring high quality, durability, and extended lifespan.

The compact physical dimensions of the SOT-323 package - 2 mm length, 1.25 mm width, and 0.95 mm height - permit high-density PCB layouts requiring minimal space. Surface mount compatibility facilitates automated assembly processes.

This bipolar transistor is employed widely in electronic equipment, automotive electronics, industrial controls, and telecommunications where space, reliability, and performance are critical. Its proven design makes it a trusted component for prototyping and volume manufacturing.

This transistor is configured as a single PNP type for general purpose switching and amplification. The device supports a maximum power dissipation of 200 mW for reliable operation. It provides a minimum DC current gain (hFE) of 220 for efficient signal amplification.

Voltage ratings include a maximum collector-base voltage of 50 V and emitter-base voltage of 5 V. Operating temperature ranges from -65°C minimum to a maximum of 150°C suitable for various industrial environments. The compact package dimensions are 2 mm length, 1.25 mm width, and 0.95 mm height for space-saving layouts.

Designed to meet the automotive standard AEC-Q101 for enhanced quality and reliability. Mount type is surface mount, compatible with modern PCB assembly processes. Find this Nexperia BC857BW,115 bipolar transistor and other discrete semiconductor components at EnvMart for your electronics manufacturing and design needs.

Explore more products in our Bipolar Transistors category.

Nexperia PNP Bipolar Transistor BC857BW,115 100 mA, 45 V, 3-Pin SOT-323 Surface Mount BC857BW,115
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Frequently Asked Questions

The maximum power dissipation of this transistor is 200 mW, allowing for reliable operation in various applications.

The minimum DC current gain (hFE) of the BC857BW,115 is 220, which ensures efficient signal amplification.

This transistor operates within a temperature range of -65°C to 150°C, making it suitable for both industrial and automotive environments.

The dimensions of the SOT-323 package are 2 mm in length, 1.25 mm in width, and 0.95 mm in height.

The maximum collector-emitter voltage (Vceo) for the BC857BW,115 is -45 V, allowing it to handle low power applications effectively.

This model is configured as a single PNP type transistor, suitable for general purpose switching and amplification.

Yes, this transistor is designed to meet the automotive standard AEC-Q101, ensuring enhanced quality and reliability.

The maximum DC collector current (Idc) for the BC857BW,115 is -100 mA, making it suitable for low power applications.

This transistor features a surface mount type, which is compatible with modern PCB assembly processes.

The maximum emitter-base voltage (VEBO) for the BC857BW,115 is -5 V, allowing it to function effectively in various circuits.

The maximum collector-base voltage (VCBO) for this transistor is -50 V, suitable for low power applications.

This transistor is widely used in electronic equipment, automotive electronics, industrial controls, and telecommunications where space, reliability, and performance are critical.

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