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Nexperia Small Signal PNP Bipolar Transistor BC857BV,115 100 mA 45 V 6-Pin SOT-666 Surface Mount BC857BV,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 0.55mm
Length 1.7mm
Model BC857BV,115
Width 1.2mm
Mount Type Surface
Series BC857BV
Maximum Operating Temperature 150°C
Package Type SOT-666
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a 6-pin SOT-666 package suitable for compact PCB layouts.
  • It provides a minimum DC current gain (hFE) of 200 for efficient amplification.
  • Capable of dissipating up to 200 mW of power under operating conditions.
  • Designed for operation across a temperature range from -65°C to 150°C.
  • Maximum transition frequency of 100 MHz supports high-frequency applications.
  • Isolated transistor configuration enhancing signal integrity and reducing interference.
  • Compliant with RoHS standards ensuring environmental safety.
  • Manufactured in China with reliable quality control.

Product Description

Nexperia BC857BV,115 is a small signal PNP bipolar transistor engineered for surface mount technology in electronic circuits. It offers a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 45 V, making it suitable for signal amplification and switching applications within a broad voltage and current range.

This transistor is housed in a compact 6-pin SOT-666 package, facilitating easy integration into densely packed circuit designs requiring surface mount configurations. Its transistor configuration is isolated, which helps maintain signal fidelity and reduces potential crosstalk in complex electronics.

With a minimum DC current gain of 200, the BC857BV,115 offers dependable amplification characteristics, enabling efficient performance in sensitive signal processing tasks. It can dissipate a maximum power of 200 mW, ensuring reliable operation without thermal failures when properly mounted.

The device supports operation over a wide temperature range from -65°C to 150°C, making it suitable for industrial and commercial environments that demand robustness under varying thermal conditions. Its maximum transition frequency of 100 MHz allows for usage in moderately high-frequency applications such as RF circuits and switching regulators.

The transistor strictly complies with RoHS regulations, ensuring reduced environmental impact through lead-free manufacturing. This component is designed and manufactured in China, combining quality standards with economical sourcing.

This transistor features a 6-pin SOT-666 surface mount package ideal for compact layouts. It supports a maximum collector current of 100 mA for small signal amplification. RoHS compliant ensuring environmental safety in electronics manufacturing.

Wide operating temperature range from -65°C to 150°C supports harsh conditions. High minimum DC current gain of 200 for reliable amplification. Maximum power dissipation of 200 mW enables stable performance. Isolated transistor configuration reduces interference and noise.

Maximum transition frequency of 100 MHz suitable for moderate frequency applications.

This product is extensively used in industrial, laboratory, and manufacturing electronics, including signal processing, analog switching, and compact PCB designs where size and performance are critically balanced. The small signal PNP transistor BC857BV,115 is vital in designing efficient amplification stages and driver circuits.

Explore more Bipolar Transistors and related semiconductor components for advanced electronics solutions on EnvMart, connecting you to high-quality suppliers and innovative products.

Nexperia Small Signal PNP Bipolar Transistor BC857BV,115 100 mA 45 V 6-Pin SOT-666 Surface Mount BC857BV,115
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Frequently Asked Questions

The maximum collector current for this model is 100 mA, allowing it to handle small signal amplification effectively.

It is housed in a 6-pin SOT-666 package, which is suitable for surface mount technology and compact PCB layouts.

This transistor operates within a wide temperature range from -65°C to 150°C, making it suitable for various industrial applications.

The minimum DC current gain (hFE) for the BC857BV,115 is 200, providing efficient amplification characteristics.

It can dissipate a maximum power of 200 mW, ensuring stable performance under proper mounting conditions.

The maximum collector-emitter voltage (Vceo) for this transistor is 45 V, allowing it to operate effectively in various applications.

The maximum transition frequency for the BC857BV,115 is 100 MHz, making it suitable for moderate frequency applications.

This model is a small signal PNP bipolar transistor, designed for efficient signal amplification and switching.

It complies with RoHS standards, ensuring reduced environmental impact through lead-free manufacturing.

The dimensions of this model are 1.7 mm in length, 1.2 mm in width, and 0.55 mm in height.

This transistor features an isolated configuration, which enhances signal integrity and reduces interference in electronic circuits.

The maximum emitter-base voltage (VEBO) for the BC857BV,115 is 5 V, allowing for reliable operation in various circuit designs.

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