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Nexperia Transistor 100 mA NPN + PNP, 45 V, 6-Pin UMT Surface Mount BC847BPN,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC847BPN,115
Width 2.2mm
Mount Type Surface
Series BC847BPN
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz
onsemi BC847BPDW1T1G Transistor, 100 mA NPN + PNP, 45 V, 6-Pin SOT-363Brand onsemi

Key Features

  • The device features low collector-emitter saturation voltage for efficient switching.
  • Closely matched current gain ensures consistent performance between transistor pairs.
  • Low collector capacitance minimizes switching losses and improves frequency response.
  • The package measures 2.2 mm length, 2.2 mm width, and 1.1 mm height for compact PCB design.
  • Reliable operation from -65°C to 150°C supports harsh industrial environments.
  • Low power dissipation of 200 mW suits low power amplification and switching applications.
  • Packaging in surface mount form factor facilitates automated assembly processes.
  • RoHS compliant with country of origin Malaysia ensures environmental safety standards.

Product Description

Nexperia BC847BPN,115 is a high-performance bipolar transistor device composed of NPN and PNP transistors in a 6-pin UMT surface mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage of 45 V, making it suitable for efficient switching and amplification in compact electronic circuits.

The transistor features a minimum DC current gain (hFE) of 200, low collector-emitter saturation voltage, and low collector capacitance, which contribute to minimizing power losses and enhancing switching speeds up to a transition frequency of 100 MHz. Its small footprint with dimensions of 2.2 mm x 2.2 mm x 1.1 mm enables dense circuit integration.

Designed for industrial and commercial electronic components, it operates reliably over a wide temperature range from -65°C to 150°C, supporting robust performance in demanding environments. The package type UMT (Ultra Miniature Transistor) with surface mount technology ensures ease of automated PCB assembly and reduced board space.

The device complies with RoHS environmental standards and originates from Malaysia. Its isolated transistor configuration eliminates mutual interference, providing precise operation for applications requiring closely matched transistor pairs.

The transistor delivers low collector-emitter saturation voltage, enhancing energy efficiency in switching circuits. Closely matched current gain between NPN and PNP transistors reduces component count and simplifies design complexity.

Low collector capacitance improves circuit frequency response and switching speed. Compact 6-pin UMT package with surface mount capability for space-critical electronics. Operational temperature range from -65°C to 150°C satisfies industrial thermal requirements.

Maximum power dissipation of 200 mW suits low power device applications. RoHS compliant, environmentally safe manufacturing process. Device is ideal for general purpose amplification and switching in semiconductor circuits.

This transistor is widely used in industrial, laboratory, electronics manufacturing, and commercial electronics projects where small size, reliable switching, and amplification performance are essential. Explore more bipolars transistors and electronic components at EnvMart for your design and production needs.

Explore more products in our Bipolar Transistors category.

Nexperia Transistor 100 mA NPN + PNP, 45 V, 6-Pin UMT Surface Mount BC847BPN,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum collector-emitter voltage rating of 45 V.

The dimensions of this transistor are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

This model operates reliably over a temperature range from -65°C to 150°C.

The minimum DC current gain (hFE) for this device is 200.

It comes in a 6-pin UMT (Ultra Miniature Transistor) surface mount package.

The maximum power dissipation for this transistor is 200 mW.

The maximum transition frequency for this transistor is 100 MHz.

Yes, this device is RoHS compliant, ensuring it meets environmental safety standards.

This model features an isolated transistor configuration, which eliminates mutual interference.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V.

This transistor is suitable for general-purpose amplification and switching in compact electronic circuits.

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