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Nexperia Darlington Transistor NPN 1A 80V HFE 1000, 4-Pin UPAK BST52,115

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model BST52,115
Mount Type Surface
Series BST52
Maximum Operating Temperature 150°C
Package Type UPAK
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Continuous Collector Current Ic 1A
Maximum Collector Emitter Voltage Vceo 80V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 1000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V
Maximum Collector Base Voltage VCBO 90V
Maximum Collector Cut-off Current 0.00005mA
Maximum Power Dissipation Pd 1.3W
onsemi BSP52T1G 1 Darlington Transistor NPN, 1 A 80 V HFE 1000, 4-Pin SOT-223Brand: onsemi
Nexperia BST52,115 1 Darlington Transistor NPN, 1 A 80 V HFE 1000, 4-Pin UPAK

Key Features

  • High DC current gain (hFE) of 1000 for amplified signal performance.
  • Compact 4-Pin UPAK surface mount package for space-saving PCB designs.
  • Maximum power dissipation of 1.3W for stable operation.
  • Wide operating temperature range from -65°C to 150°C for versatile use.
  • NPN polarity transistor suitable for various electronic applications.
  • Maximum collector-base voltage of 90V and emitter-base voltage of 5V.
  • Maximum collector-emitter saturation voltage of 1.3V for efficient switching.
  • Small form factor with height 1.6mm and length 4.6mm.

Product Description

Nexperia BST52,115 Darlington Transistor NPN is a discrete semiconductor device designed for amplification and switching applications. It features a maximum continuous collector current of 1A and a maximum collector-emitter voltage rating of 80V, making it well suited for power transistor applications in consumer electronics, industrial control systems, and signal amplification circuits.

This transistor comes in a compact 4-Pin UPAK surface mount package, enabling efficient PCB assembly and space savings. The device's high DC current gain (hFE) of 1000 ensures high amplification capabilities. It offers a maximum power dissipation of 1.3W under normal operating conditions, maintaining reliable performance and durability.

Key electrical parameters include a maximum collector-base voltage of 90V, maximum emitter-base voltage of 5V, and a saturation voltage (VceSAT) up to 1.3V, which enhances switching efficiency in electronic circuits. The transistor operates reliably across a wide temperature range from -65°C to 150°C, suitable for diverse environments found in industrial, laboratory, and electronic manufacturing applications.

Physical dimensions of the device are precise with a height of 1.6mm and length of 4.6mm, confirming its suitability for compact and miniaturized electronic designs. While it does not carry an automotive standard certification, it is optimized for general discrete semiconductor uses.

High DC current gain ensures effective amplification. Compact and surface mountable 4-Pin UPAK package. Wide operating temperature range for diverse environmental conditions. Supports up to 1.3W power dissipation for stable performance.

Designed for electronic and industrial control applications requiring NPN transistors.

This transistor is ideal for engineers and technicians requiring reliable power bipolar transistors for signal amplification, switching, and industrial electronics. Explore more Darlington Transistor components and electronics parts on EnvMart to meet your project needs.

Nexperia Darlington Transistor NPN 1A 80V HFE 1000, 4-Pin UPAK BST52,115
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Frequently Asked Questions

The maximum continuous collector current for this model is 1A.

This transistor has a maximum collector-emitter voltage rating of 80V.

It features a minimum DC current gain (hFE) of 1000, providing effective amplification.

The UPAK package has a height of 1.6mm and a length of 4.6mm.

The maximum power dissipation of this transistor is 1.3W under normal operating conditions.

It operates reliably within a wide temperature range from -65°C to 150°C.

The maximum collector-base voltage for this transistor is 90V.

The maximum emitter-base voltage (VEBO) is 5V.

It is an NPN polarity transistor suitable for various electronic applications.

This model comes in a compact 4-Pin UPAK surface mount package.

It is designed for amplification and switching applications in consumer electronics and industrial control systems.

The Nexperia BST52,115 has a pin count of 4.

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