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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | BST52,115 |
| Mount Type | Surface |
| Series | BST52 |
| Maximum Operating Temperature | 150°C |
| Package Type | UPAK |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V |
| Maximum Collector Base Voltage VCBO | 90V |
| Maximum Collector Cut-off Current | 0.00005mA |
| Maximum Power Dissipation Pd | 1.3W |
| onsemi BSP52T1G 1 Darlington Transistor NPN, 1 A 80 V HFE | 1000, 4-Pin SOT-223Brand: onsemi |
| Nexperia BST52,115 1 Darlington Transistor NPN, 1 A 80 V HFE | 1000, 4-Pin UPAK |
Nexperia BST52,115 Darlington Transistor NPN is a discrete semiconductor device designed for amplification and switching applications. It features a maximum continuous collector current of 1A and a maximum collector-emitter voltage rating of 80V, making it well suited for power transistor applications in consumer electronics, industrial control systems, and signal amplification circuits.
This transistor comes in a compact 4-Pin UPAK surface mount package, enabling efficient PCB assembly and space savings. The device's high DC current gain (hFE) of 1000 ensures high amplification capabilities. It offers a maximum power dissipation of 1.3W under normal operating conditions, maintaining reliable performance and durability.
Key electrical parameters include a maximum collector-base voltage of 90V, maximum emitter-base voltage of 5V, and a saturation voltage (VceSAT) up to 1.3V, which enhances switching efficiency in electronic circuits. The transistor operates reliably across a wide temperature range from -65°C to 150°C, suitable for diverse environments found in industrial, laboratory, and electronic manufacturing applications.
Physical dimensions of the device are precise with a height of 1.6mm and length of 4.6mm, confirming its suitability for compact and miniaturized electronic designs. While it does not carry an automotive standard certification, it is optimized for general discrete semiconductor uses.
High DC current gain ensures effective amplification. Compact and surface mountable 4-Pin UPAK package. Wide operating temperature range for diverse environmental conditions. Supports up to 1.3W power dissipation for stable performance.
Designed for electronic and industrial control applications requiring NPN transistors.
This transistor is ideal for engineers and technicians requiring reliable power bipolar transistors for signal amplification, switching, and industrial electronics. Explore more Darlington Transistor components and electronics parts on EnvMart to meet your project needs.
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