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Nexperia Small Signal PNP Transistor BCM856BS,115 100 mA, 65 V, 6-Pin SOT-363 Packaging, Surface Mount

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 3mm
Model BCM856BS,115
Width 1.4mm
Mount Type Surface
Series BCM856BS
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 175MHz
onsemi Transistor, -100 mA PNP, -65 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Maximum DC collector current is 100 mA enabling low power signal amplification.
  • Maximum collector-emitter voltage rating is 65 V for reliable operation in voltage-sensitive circuits.
  • Package features a compact 6-pin SOT-363 surface mount design suitable for modern PCB layouts.
  • Transistor polarity is PNP with isolated configuration for flexible circuit design.
  • Maximum power dissipation rated at 200 mW ensures enhanced durability.
  • Meets RoHS compliance and AEC-Q101 automotive standards providing industry reliability.
  • Operational temperature ranges from -55°C to 150°C, ideal for harsh environments.
  • Physical dimensions measure 3 mm length, 1.4 mm width, and 1.1 mm height for space-saving implementations.

Product Description

The Nexperia BCM856BS,115 is a small signal PNP transistor designed for high-reliability applications requiring a compact 6-pin SOT-363 surface mount package. With a maximum DC collector current of 100 mA and a collector-emitter voltage of 65 V, this transistor is suited for signal amplification within low-power electronic circuits.

This device features an isolated transistor configuration and operates with a maximum power dissipation of 200 mW. The device meets RoHS environmental standards and is certified to the AEC-Q101 automotive qualification, confirming its suitability for automotive and industrial applications.

Robust operating temperature range of -55°C to 150°C allows reliable use in severe temperature conditions. Its compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable space-efficient PCB layouts. The transistor exhibits minimum DC current gain of 200, ensuring good amplification performance.

Typical applications include industrial control systems, automotive electronics, communication equipment, and other embedded systems where small signal amplification is required. Maximum DC collector current of 100 mA for low power applications.

Maximum collector-emitter voltage of 65 V for reliable voltage tolerance. Compact 6-pin SOT-363 surface mount package. PNP polarity with isolated transistor configuration. Power dissipation up to 200 mW ensuring durability.

Meets RoHS and AEC-Q101 automotive standards. Wide operating temperature range from -55°C to 150°C. Small physical size: 3 mm x 1.4 mm x 1.1 mm. Minimum DC current gain hFE of 200.

This transistor is a reliable choice for electronics manufacturers and engineers seeking compact, energy-efficient semiconductor devices for industrial, automotive, and communication applications. Explore more Nexperia Bipolar Transistors and other semiconductor components at EnvMart for your design needs.

Nexperia Small Signal PNP Transistor BCM856BS,115 100 mA, 65 V, 6-Pin SOT-363 Packaging, Surface Mount
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for low power applications.

The maximum collector-emitter voltage rating is 65 V, ensuring reliable operation in voltage-sensitive circuits.

This model has dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height, allowing for space-efficient PCB layouts.

The BCM856BS,115 comes in a compact 6-pin SOT-363 surface mount package, suitable for modern electronic designs.

It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.

The minimum DC current gain (hFE) for this model is 200, ensuring effective signal amplification.

Yes, it meets RoHS compliance and is certified to the AEC-Q101 automotive standard, confirming its reliability for automotive applications.

The maximum power dissipation is rated at 200 mW, which supports its durability in various applications.

This model features a PNP transistor polarity, which allows for flexible circuit design.

The maximum transition frequency for the BCM856BS,115 is 175 MHz, suitable for high-frequency applications.

It has an isolated configuration, which provides flexibility in circuit design.

The country of origin for this model is Malaysia.

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