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| Country of Origin | Malaysia |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | BCM856BS,115 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | BCM856BS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -65V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 200mW |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 175MHz |
| onsemi Transistor, -100 mA PNP, -65 V, 6-Pin SOT-363Brand | onsemi |
The Nexperia BCM856BS,115 is a small signal PNP transistor designed for high-reliability applications requiring a compact 6-pin SOT-363 surface mount package. With a maximum DC collector current of 100 mA and a collector-emitter voltage of 65 V, this transistor is suited for signal amplification within low-power electronic circuits.
This device features an isolated transistor configuration and operates with a maximum power dissipation of 200 mW. The device meets RoHS environmental standards and is certified to the AEC-Q101 automotive qualification, confirming its suitability for automotive and industrial applications.
Robust operating temperature range of -55°C to 150°C allows reliable use in severe temperature conditions. Its compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable space-efficient PCB layouts. The transistor exhibits minimum DC current gain of 200, ensuring good amplification performance.
Typical applications include industrial control systems, automotive electronics, communication equipment, and other embedded systems where small signal amplification is required. Maximum DC collector current of 100 mA for low power applications.
Maximum collector-emitter voltage of 65 V for reliable voltage tolerance. Compact 6-pin SOT-363 surface mount package. PNP polarity with isolated transistor configuration. Power dissipation up to 200 mW ensuring durability.
Meets RoHS and AEC-Q101 automotive standards. Wide operating temperature range from -55°C to 150°C. Small physical size: 3 mm x 1.4 mm x 1.1 mm. Minimum DC current gain hFE of 200.
This transistor is a reliable choice for electronics manufacturers and engineers seeking compact, energy-efficient semiconductor devices for industrial, automotive, and communication applications. Explore more Nexperia Bipolar Transistors and other semiconductor components at EnvMart for your design needs.
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