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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 0.5mm |
| Length | 2.05mm |
| Model | HSP061-4NY8 |
| Width | 1.05mm |
| Mount Type | Surface |
| Series | HSP061 |
| Maximum Operating Temperature | 150°C |
| Package Type | QFN |
| Minimum Operating Temperature | -40°C |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Clamping Voltage VC | 18V |
| Diode Configuration | Complex Array |
| Minimum Breakdown Voltage Vbr | 6V |
| Maximum Reverse Stand-off Voltage Vwm | 3V |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 3A |
| Maximum Reverse Leakage Current | 100nA |
STMicroelectronics HSP061-4NY8 4-Element TVS Diode Array features a compact 8-pin QFN surface mount package designed for Electrostatic Discharge (ESD) protection to sensitive high-speed data lines. This diode array integrates 4 elements per chip with a complex diode configuration ensuring reliable transient voltage suppression and protection against voltage spikes common in industrial, commercial, and consumer electronic applications.
Its minimum breakdown voltage rating is 6V and it sustains a maximum reverse stand-off voltage of 3V, suited for protecting low voltage circuits. The maximum peak pulse current capacity is rated at 3 amperes, with a clamping voltage of 18V for controlled voltage limiting during surges. The device maintains performance over a wide temperature range from -40°C to 150°C, making it suitable for harsh environments.
The small QFN package has dimensions of 2.05mm in length, 1.05mm in width, and 0.5mm in height, facilitating compact PCB designs and automated assembly processes. The diode array's maximum reverse leakage current is 100nA, ensuring minimal energy loss in standby mode.
Provides robust ESD protection for high speed data lines and circuitry. Compact 8-pin QFN surface mount package ideal for space-sensitive applications. Complex diode configuration optimized for transient voltage suppression.
Wide operating temperature range from -40°C to 150°C for reliability in industrial conditions. High peak pulse current of 3A and clamp voltage of 18V. 4 elements per chip offering multi-line ESD protection integrated in a single package.
Low reverse leakage current to minimize power loss in normal operation.
This diode array is suited for applications in industrial electronics, instrumentation, telecommunications, computing, automotive electronics, and other systems requiring protection against voltage transients and electrostatic discharge. Its small form factor and reliable transient voltage suppression make it highly effective in protecting delicate semiconductor devices and integrated circuits.
Explore additional STMicroelectronics semiconductor products and related protection devices at EnvMart for comprehensive electronic component solutions.
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