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Nexperia General Purpose NPN Transistor 100 mA, 45 V, Surface Mount SOT-457 Package BCM847DS

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 3.1mm
Model BCM847DS
Width 3mm
Mount Type Surface
Series BCM847
Maximum Operating Temperature 150°C
Package Type SOT-457
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Current Mirror
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100 mA ensures effective low-power switching.
  • Collector-emitter voltage rating of 45 V for reliable operation in various circuits.
  • Surface mount package SOT-457 offers compact size with dimensions 3.1 mm length, 3 mm width, and 1.1 mm height.
  • High DC current gain (hFE) minimum 200 for good amplification characteristics.
  • Maximum power dissipation of 250 mW supports stable performance under load.
  • Maximum transition frequency of 100 MHz suitable for high-frequency signal processing.
  • Operating temperature range from -65°C to 150°C for industrial and commercial environments.
  • Pin count is 6, configured as a current mirror transistor.

Product Description

Nexperia BCM847DS is a general purpose NPN bipolar transistor featuring a surface mount SOT-457 6-pin package. It supports a maximum DC collector current of 100 mA and collector-emitter voltage of 45 V, making it ideal for various electronic and industrial applications requiring efficient switching and signal amplification.

The transistor configuration is a current mirror type, ensuring consistent current regulation in circuits. It offers a minimum DC current gain (hFE) of 200 and a maximum power dissipation rating of 250 mW. This device operates reliably within a temperature range from -65°C up to 150°C, suitable for harsh environmental conditions encountered in industrial, automotive, and manufacturing settings.

With a maximum transition frequency of 100 MHz, BCM847DS is well-suited for high-frequency applications found in telecommunications and signal processing systems. The compact SOT-457 package size (3.1 mm length × 3 mm width × 1.1 mm height) enables space-saving PCB layouts common in modern electronics.

This transistor complies with RoHS environmental directives ensuring lead-free manufacturing standards. The product is manufactured in Malaysia, reflecting global supply chain quality.

Maximum DC collector current of 100 mA for low power switching tasks. Collector-emitter voltage of 45 V enables robust voltage tolerance. Surface mount SOT-457 package for compact design and easy PCB assembly. High gain with minimum hFE of 200 for efficient amplification.

Max power dissipation of 250 mW supports consistent operation. Transition frequency up to 100 MHz for high-speed circuits. Wide operating temperature range (-65°C to 150°C) for industrial use. Six-pin configuration with current mirror transistor setup.

RoHS compliant to meet environmental safety standards. Manufactured in Malaysia to international quality standards.

This transistor is extensively used in electronic components manufacturing, power and signal control systems, industrial automation, and telecommunications equipment. EnvMart recommends exploring this reliable and efficient bipolar transistor for designing high-performance electronic circuits.

Explore more products in our Bipolar Transistors category.

Nexperia General Purpose NPN Transistor 100 mA, 45 V, Surface Mount SOT-457 Package BCM847DS
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, suitable for low power switching applications.

The collector-emitter voltage rating is 45 V, allowing for reliable operation in various circuits.

The SOT-457 package dimensions are 3.1 mm in length, 3 mm in width, and 1.1 mm in height, making it compact for PCB layouts.

The minimum DC current gain (hFE) is 200, which provides good amplification characteristics.

The maximum power dissipation is rated at 250 mW, supporting stable performance under load.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency signal processing applications.

The operating temperature range is from -65°C to 150°C, suitable for industrial and commercial environments.

This model uses a current mirror transistor configuration, which ensures consistent current regulation in circuits.

The BCM847DS has a pin count of 6, configured for its specific applications.

Yes, this transistor complies with RoHS environmental directives, ensuring lead-free manufacturing standards.

This model is manufactured in Malaysia, reflecting global supply chain quality standards.

The maximum collector-base voltage (VCBO) is 50 V, and the maximum emitter-base voltage (VEBO) is 6 V.

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