Nexperia Small Signal PNP Transistor , -100 mA Collector Current, -45 V Collector-Emitter Voltage, 3-Pin SOT-323 BC860CW

Nexperia BC860CW is a Small Signal PNP Bipolar Transistor known for its efficiency in low power amplification and switching tasks in electronic circuits. Featuring a maximum DC collector current of -100 mA and collector-emitter voltage rating of -45 V, it provides stability and reliability in various electronic applications.

Housed in a compact 3-Pin SOT-323 surface mount package, the transistor facilitates efficient PCB space usage ideal for modern miniaturized electronic devices. The device boasts a high minimum DC current gain (hFE) of 420 which enhances signal amplification capability, allowing for effective performance in sensitive circuit stages.

The transistor supports a wide temperature operating range from -65°C to 150°C, enabling it to function reliably in harsh industrial, automotive, and consumer electronics environments. With a low maximum power dissipation of 200 mW, it is suitable for handling small signal operations without excessive heat generation.

Additionally, its maximum transition frequency of 100 MHz supports high-speed switching applications and signal processing requirements. The device complies with RoHS standards, ensuring environmental safety and adherence to international regulations.

Physical dimensions are compact at 2.2 mm length, 2.2 mm width, and 1.1 mm height, confirming its suitability for space-constrained electronic assemblies. This transistor is manufactured in Malaysia, following quality control and production standards to ensure consistent performance and dependability.

Maximum DC collector current of -100 mA ensures stable operation. Collector-emitter voltage rating of -45 V for reliable performance. Compact 3-Pin SOT-323 surface mount package for efficient PCB layout. High DC current gain (hFE) minimum of 420 enhances signal amplification.

Wide operating temperature range from -65°C to 150°C supports varied environments. Low power dissipation capability of 200 mW suitable for small signal processing. Maximum transition frequency of 100 MHz for high-speed switching.

Constructed with RoHS compliant materials ensuring environmental safety. Dimensions: 2.2 mm length x 2.2 mm width x 1.1 mm height. Manufactured in Malaysia ensuring quality production standards.

This product is ideal for use in industrial, automotive, consumer electronics, telecommunications, and manufacturing sectors. Navigating the Bipolar Transistors category on EnvMart enables viewing similar high-performance transistors and complementary electronic components.