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STMicroelectronics Switching Diode Common Cathode 4A 200V TO-252 STTH802CB-TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STTH802CB-TR |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Common Cathode |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 17ns |
| Maximum Forward Current If | 4A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Common cathode diode type suitable for switching applications.
- Maximum forward current rating of 4 amperes.
- Maximum peak repetitive reverse voltage of 200 volts.
- Surface mount type with 3 pins in TO-252 package.
- Low maximum forward voltage drop of 1.25 volts.
- Peak reverse recovery time is 17 nanoseconds for fast switching.
- Operates reliably between -65°C to 175°C temperature range.
- High peak non-repetitive forward surge current capability of 100 amperes.
Product Description
STMicroelectronics STTH802CB-TR is a high-performance switching diode featuring a common cathode configuration designed for discrete semiconductor applications in electronics and electrical engineering.
The diode supports a maximum forward current of 4 amperes and can withstand a peak repetitive reverse voltage of up to 200 volts, making it suitable for various switching and rectification tasks in circuits requiring surface mount components.
Encapsulated in a compact TO-252 package with three pins, it is designed for surface mounting on printed circuit boards. The diode operates within a wide temperature range from -65°C to 175°C, ensuring reliability in harsh environments.
STTH802CB-TR offers a low maximum forward voltage drop of 1.25 volts, contributing to efficient power management and minimal heat dissipation during operation. Its peak reverse recovery time is just 17 nanoseconds, enabling fast switching performance essential for modern electronic devices.
The diode has a high peak non-repetitive forward surge current rating of 100 amperes, supporting transient load conditions without damage. Common cathode configuration for Switching Diode applications. 4 ampere maximum forward current rating.
200 volt maximum peak repetitive reverse voltage. Surface mount package type TO-252 with 3 pins. 17 nanoseconds peak reverse recovery time. Wide operating temperature range from -65°C to 175°C. High surge current capability of 100 amperes peak forward.
Compact form factor with precise dimensions for PCB integration.
This diode is commonly used in power electronics, switching power supplies, rectifiers, and industrial electronic applications requiring efficient and reliable switching components.
Explore the extensive range of STMicroelectronics semiconductors and discrete components in the EnvMart catalog for advanced circuit designs and industrial solutions.
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Frequently Asked Questions
The maximum forward current rating of this model is 4 amperes.
It can withstand a peak repetitive reverse voltage of up to 200 volts.
This diode is encapsulated in a TO-252 package, which is suitable for surface mounting.
It operates reliably between -65°C and 175°C.
The peak reverse recovery time is 17 nanoseconds, allowing for fast switching performance.
The maximum forward voltage drop is 1.25 volts.
It has a high peak non-repetitive forward surge current capability of 100 amperes.
This model features a total of 3 pins.
It uses a common cathode configuration, suitable for various switching applications.
The dimensions are 6.6mm in length, 6.2mm in width, and 2.4mm in height.
This diode is commonly used in power electronics, switching power supplies, and rectifiers.
It is a silicon junction type diode.
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