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STMicroelectronics Switching Diode, Common Cathode, Silicon Junction, 4 A, 200 V, 3-Pin TO-252 Package STTH802CB-TR

Category Switching Diode Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STTH802CB-TR
Width 6.2mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TO-252
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 17ns
Maximum Forward Current If 4A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • This diode features a silicon junction technology ensuring reliable signal switching performance.
  • It uses a surface mount TO-252 package with 3 pins for efficient PCB integration.
  • The maximum forward voltage drop is 1.25 V, optimizing power efficiency in circuits.
  • Operating temperature range from -65°C to 175°C supports diverse industrial environments.
  • Peak reverse recovery time of 17 ns allows fast switching suitable for high-speed applications.
  • Capable of 100 A peak non-repetitive forward surge current for transient tolerance.
  • Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height facilitate space-saving designs.
  • No automotive certification or other specific standards apply to this part.

Product Description

STMicroelectronics STTH802CB-TR is a high-quality switching diode designed for reliable performance in electronic circuits requiring a common cathode configuration. Rated for a maximum forward current of 4 A and a peak reverse voltage of 200 V, this device is built using silicon junction technology to ensure effective switching and rectification functionalities.

The diode is encapsulated in a surface mount TO-252 package, making it suitable for modern PCB assembly processes. It provides a maximum forward voltage drop of 1.25 V, contributing to efficient power management within various electronic applications.

With a fast peak reverse recovery time (trr) of 17 ns, the STTH802CB-TR diode supports high-speed switching applications in industrial, power supply, and signal processing circuits. It operates effectively within a wide temperature range from -65°C to 175°C, enabling use in demanding environments.

The device tolerates peak non-repetitive forward surge currents up to 100 A, allowing transient load conditions without damage. Its compact physical dimensions (6.6 mm length, 6.2 mm width, and 2.4 mm height) facilitate integration in size-sensitive designs.

This switching diode is ideal for applications in power electronics, industrial automation, and semiconductor switching systems requiring a robust common cathode diode with excellent electrical characteristics.

This diode features a silicon junction technology ensuring reliable signal switching performance. It uses a surface mount TO-252 package with 3 pins for efficient PCB integration. The maximum forward voltage drop is 1.25 V, optimizing power efficiency in circuits.

Operating temperature range from -65°C to 175°C supports diverse industrial environments. Peak reverse recovery time of 17 ns allows fast switching suitable for high-speed applications. Capable of 100 A peak non-repetitive forward surge current for transient tolerance.

Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height facilitate space-saving designs. No automotive certification or other specific standards apply to this part.

Explore more Switching Diodes from STMicroelectronics and discover reliable electronic components suited for industrial, manufacturing, and electronics laboratory applications at EnvMart.

STMicroelectronics Switching Diode, Common Cathode, Silicon Junction, 4 A, 200 V, 3-Pin TO-252 Package STTH802CB-TR
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Frequently Asked Questions

The maximum forward current of this diode is 4 A.

The peak reverse voltage rating for the STTH802CB-TR is 200 V.

The maximum forward voltage drop is 1.25 V, which optimizes power efficiency in circuits.

This diode is encapsulated in a surface mount TO-252 package with 3 pins.

The operating temperature range is from -65°C to 175°C, allowing for use in diverse industrial environments.

The peak reverse recovery time is 17 ns, suitable for high-speed applications.

This diode can tolerate a peak non-repetitive forward surge current of up to 100 A.

The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

It features a common cathode diode configuration.

No automotive certification or other specific standards apply to this part.

This diode uses silicon junction technology for reliable signal switching performance.

This model is suitable for applications in power electronics, industrial automation, and semiconductor switching systems.

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