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Nexperia Transistor 50 mA NPN 300 V SOT-23 3-Pin BF820,215

Category Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BF820,215
Width 1.4mm
Mount Type Surface
Series BF820
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
onsemi MMBTA42LT1G Transistor, 500 mA NPN, 300 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Maximum DC collector current of 50 mA ensuring moderate current applications.
  • Collector-emitter voltage rating up to 300 V suitable for high-voltage signal amplification.
  • Power dissipation capped at 250 mW to maintain device integrity.
  • High voltage NPN transistor configuration ideal for switching and amplification tasks.
  • Compact SOT-23 surface mount package with dimensions 3 mm length, 1.4 mm width, and 1.1 mm height.
  • Operational temperature range from -65°C minimum to 150°C maximum for versatile environments.
  • Reliable gain with minimum DC current gain (hFE) of 50 ensuring consistent performance.
  • Three-pin configuration suitable for standard circuit designs and layouts.

Product Description

The Nexperia BF820,215 is a high voltage NPN bipolar transistor designed for switching and amplification in electronic circuits. It supports a maximum collector current of 50 mA and can withstand collector-emitter voltages as high as 300 V, making it ideal for applications requiring handling of medium current and high voltage signals.

This transistor is housed in a compact SOT-23 package suitable for surface mounting, measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height, enabling efficient board space utilization in compact designs.

With a maximum power dissipation of 250 mW, it ensures safe operation within typical low power applications. The transistor offers a minimum DC current gain (hFE) of 50, ensuring reliable signal amplification.

Its operating temperature range from -65°C to 150°C makes it adaptable for use in diverse conditions including industrial and commercial electronic assemblies.

The 3-pin single transistor configuration facilitates easy integration into standard circuits. Nexperia's quality and performance standards support applications across industrial, laboratory, and commercial electronics where small form factor and dependable bipolar transistors are required.

Maximum DC collector current: 50 mA. Collector-emitter voltage: 300 V. Power dissipation: 250 mW. Package type: SOT-23 surface mount. Operating temperature range: -65°C to 150°C. Minimum DC current gain (hFE): 50. Compact 3-pin transistor configuration.

Explore a wide range of Transistors and semiconductor products at EnvMart for your electronic design and manufacturing needs.

Nexperia Transistor 50 mA NPN 300 V SOT-23 3-Pin BF820,215
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Frequently Asked Questions

The maximum DC collector current for this transistor is 50 mA, making it suitable for moderate current applications.

The collector-emitter voltage rating is up to 300 V, which is suitable for high-voltage signal amplification.

The maximum power dissipation for the BF820,215 is capped at 250 mW to maintain device integrity during operation.

This transistor is housed in a compact SOT-23 package with dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The operational temperature range for the BF820,215 is from -65°C to 150°C, allowing it to function in various environments.

It has a minimum DC current gain (hFE) of 50, ensuring reliable performance in amplification tasks.

The BF820,215 features a single NPN transistor configuration with three pins, suitable for standard circuit designs.

The maximum emitter-base voltage (VEBO) for this model is 5 V.

This high voltage NPN transistor is ideal for switching and amplification tasks in electronic circuits across industrial and commercial applications.

The maximum collector-base voltage (VCBO) for this transistor is 300 V.

The BF820,215 is designed for surface mounting, which allows for efficient use of board space in compact designs.

The country of origin for this transistor is India.

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