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Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin SOT-666 PEMD3,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | PEMD3,115 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PEMD3 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-666 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 200mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 230MHz |
Key Features
- This digital transistor integrates resistors allowing direct drive from digital sources.
- Offers isolated transistor configuration suitable for various electronic applications.
- Maximum power dissipation rating of 200 mW ensures reliable performance.
- Operating temperature ranges from -65°C to 150°C for industrial usage.
- Compliant with RoHS and automotive standard AEC-Q101 for quality assurance.
- Maximum transition frequency is 230 MHz enabling high-speed switching.
Product Description
Nexperia PEMD3,115 digital transistor is a dual resistor-equipped bipolar transistor incorporating both NPN and PNP transistor elements. Designed for surface mounting in the compact 6-pin SOT-666 package, this device supports a maximum DC collector current of 100 mA and can handle voltages up to 50 V between collector and emitter.
Equipped with integrated bias resistors, the device allows direct interfacing with digital circuits without external resistors, simplifying design and saving PCB space. It features isolated transistor configuration and a maximum transition frequency of 230 MHz, making it suitable for fast switching and amplification in electronic circuits.
The device is rated for power dissipation up to 200 mW and temperature operation range from -65°C to 150°C. It complies with RoHS environmental standards and meets automotive-grade AEC-Q101 requirements, making it reliable for automotive and industrial applications.
This digital transistor integrates resistors allowing direct drive from digital sources. Offers isolated transistor configuration suitable for various electronic applications. Maximum power dissipation rating of 200 mW ensures reliable performance.
Operating temperature ranges from -65°C to 150°C for industrial usage. Compliant with RoHS and automotive standard AEC-Q101 for quality assurance. Maximum transition frequency is 230 MHz enabling high-speed switching.
Ideal for use in digital signal processing, amplification, and switching circuits across various industries including electronics manufacturing, automotive electronics, and consumer devices.
EnvMart offers this Nexperia PEMD3,115 Digital Transistor as part of its electronic components catalog to support engineers and designers with quality semiconductor solutions.
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Frequently Asked Questions
The maximum DC collector current for this model is 100 mA.
It operates within a temperature range of -65°C to 150°C.
The maximum power dissipation rating is 200 mW.
This model comes in a 6-pin SOT-666 package type.
The maximum transition frequency is 230 MHz, allowing for high-speed switching.
Yes, it complies with RoHS environmental standards and meets the automotive standard AEC-Q101.
It features an isolated transistor configuration, incorporating both NPN and PNP elements.
The minimum DC current gain (hFE) is 30.
The dimensions are 1.7 mm in length, 1.7 mm in width, and 0.6 mm in height.
The maximum collector-emitter voltage (Vceo) is 50 V.
This digital transistor is designed for surface mounting.
It is suitable for digital signal processing, amplification, and switching circuits in various industries.
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