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Nexperia Low Saturation Voltage PNP Transistor PBSS9110T,215, -1 A, -100 V, 3-Pin SOT-23 PBSS9110T,215
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBSS9110T,215 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | PBSS9110T |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 125 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Power Dissipation Pd | 480mW |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- Features maximum DC collector current of -1 A for robust performance.
- Supports maximum collector-emitter voltage of -100 V for versatile usage.
- Compact 3-pin SOT-23 surface mount package suitable for modern electronics.
- Ensures low collector-emitter saturation voltage, improving energy efficiency.
- Operates efficiently at temperatures from -65°C to 150°C.
- Maximum power dissipation rating of 480 mW for reliable thermal handling.
- Maximum transition frequency of 100 MHz suitable for high-frequency circuits.
- Manufactured in China with a minimum DC current gain (hFE) of 125.
Product Description
Nexperia PBSS9110T,215 is a low saturation voltage PNP bipolar junction transistor housed in a compact 3-pin SOT-23 surface mount package. Designed for switching and digital applications, it offers a maximum DC collector current of -1 A and supports a maximum collector-emitter voltage of -100 V, enabling use in a wide range of electronic circuits.
This transistor features very low collector-emitter saturation voltages, reducing power losses and heat generation, which increases overall efficiency. Its maximum power dissipation is rated at 480 mW, making it suitable for applications requiring reliable thermal management.
With a transition frequency of 100 MHz, the PBSS9110T,215 transistor supports high-frequency operation, while its minimum DC current gain of 125 ensures strong amplification characteristics. The device operates over a broad temperature range from -65°C to 150°C, suitable for demanding industrial and commercial environments.
The 3-pin SOT-23 package allows for surface mounting in compact designs, ideal for modern electronics manufacturing. Key electrical ratings include a maximum collector base voltage (VCBO) of 120 V and a maximum emitter base voltage (VEBO) of 5 V.
Manufactured in China, this transistor is used in electronic components, power, and connectors for industrial, commercial, and consumer electronics applications. Features maximum DC collector current of -1 A for robust performance.
Supports maximum collector-emitter voltage of -100 V for versatile usage. Compact 3-pin SOT-23 surface mount package suitable for modern electronics. Ensures low collector-emitter saturation voltage, improving energy efficiency.
Operates efficiently at temperatures from -65°C to 150°C. Maximum power dissipation rating of 480 mW for reliable thermal handling. Maximum transition frequency of 100 MHz suitable for high-frequency circuits. Manufactured in China with a minimum DC current gain (hFE) of 125.
Explore the range of Nexperia Bipolar Transistors at EnvMart for reliable and efficient semiconductor solutions.
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Frequently Asked Questions
The maximum DC collector current of this model is -1 A, allowing for robust performance in various applications.
It supports a maximum collector-emitter voltage of -100 V, making it versatile for different circuit designs.
The SOT-23 package has dimensions of 3 mm in length, 2.5 mm in width, and a height of 1.1 mm.
It operates efficiently over a temperature range from -65°C to 150°C, suitable for demanding environments.
The maximum power dissipation rating is 480 mW, which supports reliable thermal handling in applications.
The maximum transition frequency is 100 MHz, making it suitable for high-frequency circuits.
The minimum DC current gain (hFE) is 125, ensuring strong amplification characteristics.
It uses a surface mount type, specifically designed for compact electronic applications.
The maximum collector-base voltage (VCBO) is 120 V, and the maximum emitter-base voltage (VEBO) is 5 V.
This model features PNP transistor polarity, suitable for various electronic applications.
It is manufactured in China, adhering to relevant industry standards.
The configuration type of this transistor is single, designed for individual use in circuits.
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