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Nexperia Low Saturation Voltage NPN Transistor 1A 100V 4-Pin SOT-223 PBSS8110Z,135

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.65mm
Length 6.7mm
Model PBSS8110Z,135
Width 7.3mm
Mount Type Surface
Series PBSS8110Z
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 1.4W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • Low saturation voltage enhances efficiency during switching.
  • Designed for surface mount applications in compact spaces.
  • Maximum power dissipation of 1.4W supports moderate power loads.
  • High collector base voltage rating of 120V for robust operation.
  • Operates across a wide temperature range from -65°C to 150°C.
  • Transition frequency up to 100MHz suitable for high-speed switching.
  • Minimal emitter base voltage at 5V ensures stable transistor switching.
  • Pin count of 4 supports secure connections and mounting.

Product Description

Nexperia PBSS8110Z,135 is a low saturation voltage NPN bipolar junction transistor designed to handle a maximum DC collector current of 1 ampere and can withstand collector-emitter voltages up to 100 volts. It features a compact 4-pin SOT-223 surface mount package optimized for space-saving designs.

This transistor series provides low collector-emitter saturation voltage which reduces power losses and heat generation. It supports efficient switching and digital applications, making it suitable for industrial electronic circuits and power control systems.

With a maximum power dissipation rating of 1.4 watts, it is capable of moderate power handling. The devices also feature a high collector base voltage specification of 120 volts, enhancing their robustness in demanding electrical environments.

Operational temperature ranges from -65°C to +150°C, allowing stable performance under harsh conditions. The transistor offers a minimum DC current gain of 80 and a maximum transition frequency of 100MHz, enabling high-frequency applications.

Physically, it measures 6.7mm in length, 7.3mm in width, and 1.65mm in height, facilitating integration into compact electronic assemblies. The 4-pin configuration supports reliable mounting and connections in surface mount technology setups.

This transistor is manufactured in China and does not carry specific industry certifications but adheres to standard quality guidelines. It is ideal for industrial electronics, control systems, consumer electronic devices, and telecommunications equipment where efficient switching and low voltage operation are critical.

Set contains a single Nexperia PBSS8110Z,135 transistor in a 4-pin SOT-223 package, prepared for seamless surface mount assembly. Explore more Bipolar Transistors and other semiconductor components in EnvMart's Electronics & Electricals category for specialized industrial and laboratory applications.

Low saturation voltage enhances efficiency during switching. Designed for surface mount applications in compact spaces. Maximum power dissipation of 1.4W supports moderate power loads. High collector base voltage rating of 120V for robust operation.

Operates across a wide temperature range from -65°C to 150°C. Transition frequency up to 100MHz suitable for high-speed switching. Minimal emitter base voltage at 5V ensures stable transistor switching. Pin count of 4 supports secure connections and mounting.

Compact dimensions of 6.7mm length, 7.3mm width, and 1.65mm height. Originates from China, maintaining quality standards.

Nexperia Low Saturation Voltage NPN Transistor 1A 100V 4-Pin SOT-223 PBSS8110Z,135
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Frequently Asked Questions

The maximum collector-emitter voltage for the Nexperia PBSS8110Z,135 transistor is 100 volts.

This model has a maximum power dissipation rating of 1.4 watts, allowing it to handle moderate power loads.

It operates across a wide temperature range from -65°C to +150°C, ensuring stable performance under harsh conditions.

The maximum transition frequency of this transistor is up to 100MHz, making it suitable for high-speed switching applications.

The dimensions of the Nexperia PBSS8110Z,135 are 6.7mm in length, 7.3mm in width, and 1.65mm in height.

This transistor features a pin count of 4, which supports secure connections and mounting in surface mount applications.

The minimum DC current gain for the PBSS8110Z,135 is 80, which facilitates efficient switching performance.

It comes in a 4-pin SOT-223 package, designed for surface mount applications.

The maximum collector base voltage rating for this transistor is 120 volts, enhancing its robustness in demanding environments.

The configuration of the PBSS8110Z,135 is single, classified as an NPN transistor.

The maximum emitter base voltage for this model is 5 volts, ensuring stable transistor switching.

This transistor is manufactured in China, adhering to standard quality guidelines.

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