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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBSS9110T,215 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | PBSS9110T |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 125 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Power Dissipation Pd | 480mW |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Nexperia PBSS9110T,215 Low Saturation Voltage PNP Bipolar Transistor is a high-efficiency device designed for switching and digital electronics applications. It features a compact 3-pin SOT-23 surface mount package, allowing its integration in space-constrained industrial, laboratory, and commercial circuit designs.
This transistor supports a maximum DC collector current of 1 A and a maximum collector-emitter voltage of 100 V, making it suitable for moderate power semiconductor circuit implementations. Its low saturation voltage minimizes power losses and thermal buildup, enhancing operational efficiency.
The transistor offers a maximum power dissipation rating of 480 mW and maintains stable operation over a wide temperature range from -65 °C to 150 °C, enabling reliable use in demanding industrial and automotive environments. With a minimum DC current gain of 125 and a high transition frequency of 100 MHz, it facilitates effective signal amplification and fast switching speeds.
Key features include its single transistor configuration and PNP polarity, which are optimal for various electronic circuit designs requiring low voltage, high current switching elements. The device conforms to Nexperia's PBSS9110T series standards and is manufactured in China under new product condition.
Compact 3-pin SOT-23 surface mount package for space-saving integration. Maximum collector current of 1 A for moderate power handling. Collector-emitter voltage up to 100 V suitable for switching circuits. Low saturation voltage reduces heat generation and losses.
Power dissipation rating of 480 mW ensures reliable performance. DC current gain of at least 125 ensures good amplification. Wide operating temperature range from -65 °C to 150 °C. High transition frequency of 100 MHz for rapid switching.
PNP transistor configuration for versatile application. Manufactured in China with guaranteed new condition.
This transistor is ideal for industrial, manufacturing, automotive, laboratory, and commercial electronics applications where efficient, low-power loss switching is required. Explore our full range of Bipolar Transistors and electronic components at EnvMart for all your semiconductor needs.
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