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Nexperia PNP Transistor 2 A -50 V 4-Pin UPAK Low Saturation Voltage PBSS5250X,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.5mm
Length 4.6mm
Model PBSS5250X,115
Width 2.5mm
Mount Type Surface
Series PBSS5250X
Maximum Operating Temperature 150°C
Package Type UPAK
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Diodes Inc 2DA1971-7 Transistor, -500 mA PNP, -400 V, 3-Pin SOT-89Brand DiodesZetex

Key Features

  • This PNP transistor features a maximum power dissipation of 1 watt ensuring reliable performance.
  • It operates within a temperature range of -65°C to 150°C for versatile applications.
  • The device has a low saturation voltage, enhancing efficiency in switching circuits.
  • Its surface mount UPAK package is compact with dimensions 4.6mm x 2.5mm x 1.5mm.
  • The transistor offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100 MHz.
  • Designed for single transistor configuration with 4 pins, suitable for digital and switching uses.
  • Compliant with RoHS standards indicating hazardous substance restrictions.

Product Description

Nexperia PBSS5250X,115 is a high-efficiency PNP bipolar junction transistor designed for use in electronic components, semiconductor, and discrete semiconductor applications. This surface mount transistor features a maximum collector current of 2 A and a collector emitter voltage rating of -50 V, supporting robust power handling suitable for switching and amplification use cases.

The device comes in a compact 4-Pin UPAK package with dimensions of 4.6 mm length, 2.5 mm width, and 1.5 mm height, ideal for space-saving PCB assembly. Its power dissipation rating of 1 watt ensures stable operation within the rated thermal limits and temperature range from -65°C to 150°C.

With a minimum DC current gain (hFE) of 100 and a transition frequency of 100 MHz, the transistor delivers reliable gain and fast switching characteristics, making it well suited for digital and low saturation voltage switching circuits. The single transistor configuration and RoHS compliance provide assurance of quality and environmental safety standards compliance.

The PBSS5250X,115 is widely used in industrial, manufacturing, and electronic instrumentation environments, including control systems, automotive electronics, and power management circuits. Its low saturation voltage contributes to reduced heat generation and enhanced system efficiency.

This PNP transistor features a maximum power dissipation of 1 watt ensuring reliable performance. It operates within a temperature range of -65°C to 150°C for versatile applications. The device has a low saturation voltage, enhancing efficiency in switching circuits.

Its surface mount UPAK package is compact with dimensions 4.6mm x 2.5mm x 1.5mm. The transistor offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100 MHz. Designed for single transistor configuration with 4 pins, suitable for digital and switching uses.

Compliant with RoHS standards indicating hazardous substance restrictions. Explore the wide selection of Bipolar Transistors and semiconductors on EnvMart for additional components suited to your electronic design and manufacturing needs.

Nexperia PNP Transistor 2 A -50 V 4-Pin UPAK Low Saturation Voltage PBSS5250X,115
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Frequently Asked Questions

The maximum collector current for this model is -2 A.

It operates within a temperature range of -65°C to 150°C.

This transistor comes in a compact 4-Pin UPAK package.

The maximum power dissipation rating is 1 watt.

The minimum DC current gain (hFE) is 100.

The transition frequency is 100 MHz.

The dimensions of the UPAK package are 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height.

The maximum collector-emitter voltage (Vceo) is -50 V.

Yes, it is compliant with RoHS standards, indicating hazardous substance restrictions.

It is designed for a single transistor configuration with 4 pins.

The maximum emitter-base voltage (VEBO) is 5 V.

This model is suitable for digital and low saturation voltage switching circuits, as well as amplification use cases.

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