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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.5mm |
| Length | 4.6mm |
| Model | PBSS5250X,115 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | PBSS5250X |
| Maximum Operating Temperature | 150°C |
| Package Type | UPAK |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| Diodes Inc 2DA1971-7 Transistor, -500 mA PNP, -400 V, 3-Pin SOT-89Brand | DiodesZetex |
Nexperia PBSS5250X,115 is a high-efficiency PNP bipolar junction transistor designed for use in electronic components, semiconductor, and discrete semiconductor applications. This surface mount transistor features a maximum collector current of 2 A and a collector emitter voltage rating of -50 V, supporting robust power handling suitable for switching and amplification use cases.
The device comes in a compact 4-Pin UPAK package with dimensions of 4.6 mm length, 2.5 mm width, and 1.5 mm height, ideal for space-saving PCB assembly. Its power dissipation rating of 1 watt ensures stable operation within the rated thermal limits and temperature range from -65°C to 150°C.
With a minimum DC current gain (hFE) of 100 and a transition frequency of 100 MHz, the transistor delivers reliable gain and fast switching characteristics, making it well suited for digital and low saturation voltage switching circuits. The single transistor configuration and RoHS compliance provide assurance of quality and environmental safety standards compliance.
The PBSS5250X,115 is widely used in industrial, manufacturing, and electronic instrumentation environments, including control systems, automotive electronics, and power management circuits. Its low saturation voltage contributes to reduced heat generation and enhanced system efficiency.
This PNP transistor features a maximum power dissipation of 1 watt ensuring reliable performance. It operates within a temperature range of -65°C to 150°C for versatile applications. The device has a low saturation voltage, enhancing efficiency in switching circuits.
Its surface mount UPAK package is compact with dimensions 4.6mm x 2.5mm x 1.5mm. The transistor offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100 MHz. Designed for single transistor configuration with 4 pins, suitable for digital and switching uses.
Compliant with RoHS standards indicating hazardous substance restrictions. Explore the wide selection of Bipolar Transistors and semiconductors on EnvMart for additional components suited to your electronic design and manufacturing needs.
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