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Nexperia Low Saturation Voltage PNP Bipolar Junction Transistor 2 A, -50 V, 4-Pin UPAK PBSS5250X,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.5mm
Length 4.6mm
Model PBSS5250X,115
Width 2.5mm
Mount Type Surface
Series PBSS5250X
Maximum Operating Temperature 150°C
Package Type UPAK
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor supports a maximum DC collector current of 2 A.
  • It can withstand a collector-emitter voltage of -50 V.
  • The package type is UPAK with surface mount for efficient PCB integration.
  • Features a minimum DC current gain (hFE) of 100 ensuring effective amplification.
  • Maximum operating temperature ranges up to 150°C suitable for various industrial applications.
  • Designed for switching and digital circuit applications with low heat generation.
  • Pin count is 4 to facilitate easy mounting and connectivity.
  • Conforms to RoHS standards, ensuring environmental compliance.

Product Description

The Nexperia PBSS5250X,115 is a low saturation voltage PNP bipolar junction transistor designed for applications requiring up to 2 A collector current and a collector-emitter voltage of -50 V. Packaged in a compact 4-pin UPAK surface mount, this transistor minimizes losses, resulting in lower heat generation and increased efficiency in switching and digital electronics.

Its construction supports a maximum power dissipation of 1 watt and a transition frequency of 100 MHz, making it suitable for high-frequency industrial, laboratory, and commercial electronics where reliable transistor performance is critical. The device operates safely within -65°C to 150°C temperature range, supporting robust operation in various environments.

With a high current gain (hFE) minimum of 100 and standard RoHS compliance, the PBSS5250X,115 is environmentally friendly and meets stringent manufacturing standards. Its dimensions of 1.5 mm height, 2.5 mm width, and 4.6 mm length allow for compact PCBs and seamless integration into modern designs.

Ideal for applications in power management, signal amplification, and switching roles, this transistor is widely utilized across manufacturing, industrial controls, electronic prototypes, and HVAC control systems.

This transistor supports a maximum DC collector current of 2 A. Collector-emitter voltage rating is -50 V with a maximum power dissipation of 1 W. 4-pin UPAK surface mount package optimizes PCB space and mounting efficiency.

Minimum DC current gain of 100 ensures effective signal amplification and switching. Operating temperature range from -65°C to 150°C supports diverse environments. Transition frequency of 100 MHz suitable for high-frequency switching applications.

Compact physical dimensions enable versatile design integration. RoHS compliant ensuring adherence to environmental standards.

For detailed technical documentation and design resources, please refer to Nexperia’s official datasheets and application notes. Browse our Electronics & Electricals category to explore a wide range of semiconductors and Bipolar Transistors suited for various industrial and laboratory applications.

Nexperia Low Saturation Voltage PNP Bipolar Junction Transistor 2 A, -50 V, 4-Pin UPAK PBSS5250X,115
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Frequently Asked Questions

The maximum DC collector current for this model is 2 A.

It can withstand a collector-emitter voltage of -50 V.

This transistor has dimensions of 1.5 mm in height, 2.5 mm in width, and 4.6 mm in length.

The transistor is packaged in a 4-pin UPAK surface mount format.

It features a minimum DC current gain (hFE) of 100.

The maximum power dissipation for this transistor is 1 W.

It operates safely within a temperature range of -65°C to 150°C.

The maximum transition frequency is 100 MHz, suitable for high-frequency applications.

Yes, it conforms to RoHS standards, ensuring environmental compliance.

This model is suitable for power management, signal amplification, and switching applications.

The maximum emitter-base voltage (VEBO) is 5 V.

It is a low saturation voltage PNP bipolar junction transistor.

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