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STMicroelectronics Darlington Transistor NPN 4 A 80 V 40 W 3-Pin SOT-32 BD679A
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 10.8mm |
| Length | 7.8mm |
| Model | BD679A |
| Mount Type | Through Hole |
| Series | BD679A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 40W |
| STMicroelectronics 1 Darlington Transistor NPN, 4 A 80 V HFE | 750, 3-Pin SOT-32 |
Key Features
- Maximum continuous collector current Ic of 4 A ensures robust performance.
- Maximum collector emitter voltage Vceo up to 80 V for versatile applications.
- High minimum DC current gain hFE of 750 for efficient amplification.
- Maximum power dissipation Pd rated at 40 W for reliable operation.
- Operating temperature range from -65°C to 150°C suits harsh environments.
- Compact 3-pin SOT-32 package type for through-hole mounting.
- NPN transistor polarity suited for switching and amplification.
- Maximum collector emitter saturation voltage VceSAT of 2.5 V minimizes losses.
Product Description
STMicroelectronics BD679A is a high-performance NPN Darlington transistor designed for power applications. It supports a maximum continuous collector current of 4 A and a collector emitter voltage rating of up to 80 V, making it suitable for a broad range of electronic circuits requiring high gain and power handling capability.
Its compact 3-pin SOT-32 housing enables easy incorporation into through-hole mounting designs, providing stable mechanical and thermal characteristics. The device features a minimum DC current gain (hFE) of 750 that guarantees efficient amplification in signal processing and switching tasks.
With a maximum power dissipation of 40 W and operating temperature range from -65°C to 150°C, the BD679A transistor ensures reliable operation even under demanding conditions typical in industrial, automotive, and consumer electronics environments.
Additional specifications include a maximum collector emitter saturation voltage of 2.5 V and a maximum emitter base voltage of 5 V, offering protective electrical characteristics for enhanced device longevity.
The transistor's dimensions of 10.8 mm in height and 7.8 mm in length facilitate compact PCB layouts while maintaining robust electrical performance. This device is ideal for use in amplification stages, switching circuits, and other power handling applications.
Maximum continuous collector current Ic of 4 A. Maximum collector emitter voltage Vceo of 80 V. Minimum DC current gain hFE of 750. Maximum power dissipation of 40 W. Operating temperature range of -65°C to 150°C. 3-pin SOT-32 through-hole package.
NPN transistor polarity. Maximum collector emitter saturation voltage VceSAT of 2.5 V. Maximum emitter base voltage VEBO of 5 V. Physical height 10.8 mm and length 7.8 mm.
This STMicroelectronics BD679A Darlington Transistor is suitable for industrial electronics, power amplification, switching applications, automotive electronics, and general purpose circuit designs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 4 A, ensuring robust performance in various applications.
The BD679A has a maximum collector emitter voltage rating of up to 80 V, making it suitable for a wide range of electronic circuits.
This model features a minimum DC current gain (hFE) of 750, which guarantees efficient amplification for signal processing and switching tasks.
The maximum power dissipation for the BD679A is rated at 40 W, allowing for reliable operation in demanding conditions.
It operates within a temperature range of -65°C to 150°C, making it suitable for harsh environments.
The transistor comes in a compact 3-pin SOT-32 package type, designed for through-hole mounting.
This model has a height of 10.8 mm and a length of 7.8 mm, facilitating compact PCB layouts.
The maximum collector emitter saturation voltage (VceSAT) for the BD679A is 2.5 V, which helps minimize losses during operation.
The maximum emitter base voltage (VEBO) for this transistor is 5 V, providing protective electrical characteristics.
The BD679A features an NPN transistor polarity, making it suitable for both switching and amplification applications.
The maximum collector cut-off current for the BD679A is 0.2 mA, which is important for ensuring device longevity.
This transistor is suitable for industrial electronics, power amplification, switching applications, automotive electronics, and general purpose circuit designs.
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