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Nexperia Bipolar Transistor NPN 1.5 A 60 V Surface Mount SOT-223 Package BCP55,115
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | BCP55,115 |
| Width | 7.3mm |
| Mount Type | Surface |
| Series | BCP55 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 63 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 60V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum DC Collector Current Idc | 1.5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 180MHz |
| onsemi BCP55 Transistor, 1.5 A NPN, 60 V, 4-Pin SOT-223Brand | onsemi |
Key Features
- Features a 4-pin SOT-223 package suitable for PCB surface mounting.
- Offers a maximum power dissipation of 1.5 W for robust operation.
- Maximum transition frequency of 180 MHz enabling high-speed switching.
- Operates reliably from -55°C up to 150°C for wide temperature applications.
- Includes automotive-grade standard AEC-Q101 certification for quality assurance.
- Minimum DC current gain (hFE) of 63 ensures dependable amplification.
- Designed with NPN transistor polarity ideal for general purpose amplification.
- Compliant with RoHS standards to meet environmental regulations.
Product Description
Nexperia BCP55,115 Bipolar Transistor NPN is a high-quality surface mount transistor designed for general purpose amplification and switching applications in industrial, automotive, and consumer electronics.
It supports a maximum DC collector current of 1.5 A and a maximum collector-emitter voltage of 60 V. Packaged in a compact 4-pin SOT-223 form factor, it allows easy integration into printed circuit boards with surface mounting techniques.
The transistor provides a power dissipation rating of 1.5 W and a high transition frequency of 180 MHz, suitable for high-speed and power-efficient designs.
Operating temperature ranges from -55°C to 150°C make it reliable in harsh environmental conditions. With a minimum DC current gain (hFE) of 63, it delivers dependable performance in amplification tasks.
This NPN transistor is compliant with RoHS environmental standards and meets automotive standard AEC-Q101, indicating its appropriateness for automotive electronics. Compact SOT-223 surface mount package with 4 pins. Maximum DC collector current: 1.5 A.
Maximum collector-emitter voltage: 60 V. Power dissipation: 1.5 W. Minimum DC current gain (hFE): 63. Maximum transition frequency: 180 MHz. Operating temperature range: -55°C to 150°C. Automotive standard AEC-Q101 compliant.
RoHS certified for environmental safety. This transistor is widely applicable in industrial electronics, automotive control systems, power amplification, and general semiconductor circuit designs.
Choose Nexperia BCP55,115 for dependable, high-performance bipolar transistor solutions. Browse more Bipolar Transistors and electronic components at EnvMart for your project needs.
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Frequently Asked Questions
The maximum DC collector current for this model is 1.5 A.
This unit has a maximum collector-emitter voltage of 60 V.
It offers a maximum power dissipation of 1.5 W.
The operating temperature range for this transistor is from -55°C to 150°C.
The maximum transition frequency is 180 MHz, suitable for high-speed applications.
The dimensions of the SOT-223 package are 6.7 mm in length, 7.3 mm in width, and 1.8 mm in height.
The minimum DC current gain (hFE) is 63, providing reliable amplification.
Yes, it is RoHS compliant, meeting environmental safety regulations.
This model is compliant with the automotive standard AEC-Q101.
It has a pin count of 4, suitable for surface mounting.
This is a single NPN transistor configuration, designed for general purpose applications.
It is widely applicable in industrial electronics, automotive control systems, and general semiconductor circuit designs.
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