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Nexperia Small Signal NPN Transistor BC846,215 100mA 65V 3-Pin SOT-23 BC846,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC846,215
Width 2.5mm
Mount Type Surface
Series BC846x
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC846BLT1G Transistor, 100 mA NPN, 65 V, 3-Pin SOT-23Brand onsemi
Infineon BC846B NPN Bipolar Transistor, 100 mA, 65 V, 3-Pin SOT-23Brand Infineon

Key Features

  • Rated for maximum DC collector current of 100 mA.
  • Supports a maximum collector emitter voltage of 65 volts.
  • Compact 3-pin SOT-23 surface mount package suitable for space-constrained applications.
  • Offers a minimum DC current gain (hFE) of 110 ensuring good amplification performance.
  • Maximum power dissipation of 250 mW enables efficient thermal management.
  • Operates reliably across temperatures from -65°C to 150°C.
  • High maximum transition frequency of 100 MHz for high-speed switching.
  • Designed as a single transistor configuration with NPN polarity.

Product Description

Nexperia BC846,215 is a small signal NPN bipolar transistor ideally suited for electronic switching and amplification applications requiring up to 100 mA collector current and 65 V collector-emitter voltage. This transistor is housed in a compact 3-pin SOT-23 surface mount package, facilitating easy PCB integration for space-sensitive industrial and commercial electronics.

The device features a minimum DC gain (hFE) of 110 providing efficient current amplification while maintaining low power dissipation of 250 mW, ensuring effective thermal performance in demanding environments. Its operating temperature range from -65°C to +150°C makes it suitable for use in industrial and automotive electronics where reliability is crucial over wide temperature fluctuations.

Nexperia BC846,215 transistor supports a maximum transition frequency of 100 MHz, enabling fast switching speeds for signal processing and control circuits. The transistor configuration is single NPN, a common polarity for wide-ranging circuit implementations.

This component has a maximum collector-base voltage of 80 V and an emitter-base voltage rating of 6 V, ensuring robust operation in standard signal environments. The product conforms to RoHS compliance, aligning with modern electronic environmental standards.

Nexperia’s BC846,215 transistor is frequently used in industrial control systems, electronic instrumentation, automotive circuits, consumer electronics, and other applications requiring reliable, low-level signal amplification or switching.

Maximum DC collector current: 100 mA. Maximum collector emitter voltage: 65 V. Package Type: SOT-23 surface mount. Minimum DC gain (hFE): 110. Power dissipation: 250 mW. Operating temperature range: -65°C to 150°C. Transition frequency: 100 MHz.

Pin count: 3. Transistor polarity: NPN. RoHS compliant. Explore the Bipolar Transistors category on EnvMart for other NPN transistor models and related components from trusted brands like Nexperia.

Nexperia Small Signal NPN Transistor BC846,215 100mA 65V 3-Pin SOT-23 BC846,215
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It supports a maximum collector-emitter voltage of 65 volts.

This transistor is housed in a compact 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) is 110, ensuring efficient amplification performance.

It has a maximum power dissipation of 250 mW, allowing for effective thermal management.

The operating temperature range is from -65°C to 150°C, making it suitable for various environments.

It supports a maximum transition frequency of 100 MHz, enabling high-speed switching capabilities.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum emitter-base voltage (VEBO) is rated at 6 V.

This model is frequently used in industrial control systems, electronic instrumentation, and automotive circuits.

Yes, this transistor conforms to RoHS compliance, aligning with modern electronic environmental standards.

It is designed as a single NPN transistor configuration, suitable for various circuit implementations.

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