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Nexperia Darlington Transistor NPN 1A 45V HFE 1000 4-Pin UPAK BST50,115

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model BST50,115
Mount Type Surface
Series BST50
Maximum Operating Temperature 150°C
Package Type UPAK
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Continuous Collector Current Ic 1A
Maximum Collector Emitter Voltage Vceo 45V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 1000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V
Maximum Collector Base Voltage VCBO 60V
Maximum Collector Cut-off Current 0.00005mA
Maximum Power Dissipation Pd 1.3W
onsemi 1 Darlington Transistor NPN, 1 A 80 V HFE 1000, 4-Pin SOT-223Brand: onsemi
Nexperia 1 Darlington Transistor NPN, 1 A 45 V HFE 1000, 4-Pin UPAK

Key Features

  • The transistor has a maximum continuous collector current of 1 ampere.
  • It features a maximum collector-emitter voltage of 45 volts for robust operation.
  • The device has a high minimum DC current gain (hFE) of 1000.
  • Designed in a compact 4-pin UPAK package for surface mounting.
  • The maximum power dissipation rating is 1.3 watts.
  • Operates reliably between -65°C and 150°C temperature range.
  • Maximum collector cutoff current is extremely low at 0.00005 mA.
  • This NPN polarity transistor includes a maximum emitter-base voltage of 5 volts.

Product Description

Nexperia BST50,115 Darlington Transistor NPN 1A 45V HFE 1000 4-Pin UPAK is a state-of-the-art bipolar transistor designed for high-gain amplification in electronic circuits. Its suitability for surface mounting and compact footprint make it ideal for modern electronic components assemblies.

This transistor supports a maximum continuous collector current of 1 ampere and can withstand collector-emitter voltages up to 45 volts, ensuring reliable performance in power amplification applications within consumer electronics, industrial control systems, and automotive electronics.

Featuring a very high minimum DC current gain (hFE) of 1000, it provides excellent current amplification efficiency. Its maximum power dissipation of 1.3 watts allows safe operation under elevated power conditions.

The device operates across a broad temperature range from -65°C up to 150°C, allowing use in harsh environmental conditions. A low maximum cutoff current of 0.00005 mA ensures minimal leakage currents, optimizing efficiency and reducing power loss.

The 4-pin UPAK package supports surface mounting technology, simplifying PCB design and boosting assembly productivity. Its compact dimensions of 1.6 mm height and 4.6 mm length help in minimizing board space usage.

Maximum collector current: 1 A. Collector-emitter voltage: 45 V. Minimum DC current gain: 1000. Power dissipation: 1.3 W. Operating temperature range: -65°C to 150°C. Package type: 4-Pin UPAK surface mount.

This Darlington transistor is widely used in electronic, industrial, automotive, and power management applications requiring compact high-gain switching and amplification components.

Explore the range of high-quality Nexperia semiconductor components and Darlington Transistors available at EnvMart for your industrial and electronic design needs.

Nexperia Darlington Transistor NPN 1A 45V HFE 1000 4-Pin UPAK BST50,115
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Frequently Asked Questions

The maximum continuous collector current of this transistor is 1 ampere.

It features a maximum collector-emitter voltage of 45 volts.

This model has a minimum DC current gain (hFE) of 1000, providing excellent current amplification efficiency.

The maximum power dissipation rating is 1.3 watts, allowing safe operation under elevated power conditions.

It operates reliably between -65°C and 150°C, making it suitable for harsh environmental conditions.

This transistor is designed in a compact 4-pin UPAK package for surface mounting.

The dimensions are 1.6 mm in height and 4.6 mm in length.

The maximum emitter-base voltage is 5 volts.

The maximum collector cutoff current is extremely low at 0.00005 mA, ensuring minimal leakage currents.

There is 1 element per chip in this transistor.

The maximum collector-emitter saturation voltage (VceSAT) is 1.3 volts.

This Darlington transistor is widely used in electronic, industrial, automotive, and power management applications requiring compact high-gain switching and amplification components.

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