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STMicroelectronics NPN Darlington Transistor 4 A, 100 V, HFE 750, 3-Pin SOT-32 BD681
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 10.8mm |
| Length | 7.8mm |
| Model | BD681 |
| Mount Type | Through Hole |
| Series | BD681 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 40W |
| STMicroelectronics 1 Darlington Transistor NPN, 4 A 100 V HFE | 750, 3-Pin SOT-32 |
Key Features
- Maximum continuous collector current of 4 A enables high-power applications.
- Collector emitter voltage (Vceo) rated at 100 V ensures reliable operation under high voltage.
- Minimum DC current gain (hFE) of 750 provides amplified signal strength.
- 3-pin SOT-32 package with through-hole mount type for easy PCB integration.
- Maximum power dissipation of 40 W supports robust transistor performance.
- Wide operating temperature range from -65°C to 150°C for diverse environments.
- NPN transistor polarity suitable for various switching and amplification circuits.
- Compact height of 10.8 mm and length of 7.8 mm for space-efficient designs.
Product Description
STMicroelectronics BD681 is a high-performance NPN Darlington transistor designed for power and general-purpose switching applications. It can continuously handle collector currents up to 4 A and withstand voltages up to 100 V, making it suitable for use in industrial, automotive, and consumer electronic circuits where efficient amplification and switching are critical.
This transistor features a high minimum DC current gain (hFE) of 750, providing excellent signal amplification in compact 3-pin SOT-32 packaging. Its through-hole mount type offers easy and reliable installation on printed circuit boards.
With power dissipation capability of 40 W, BD681 supports demanding power applications while maintaining thermal stability across a wide operating temperature range from -65°C to 150°C. The device exhibits a maximum collector-emitter saturation voltage of 2.5 V, ensuring energy-efficient switching operations with reduced heat generation.
Its compact dimensions of 10.8 mm height and 7.8 mm length facilitate integration into space-constrained designs. The low maximum collector cut-off current of 0.2 mA helps minimize leakage currents, enhancing overall circuit reliability.
Maximum continuous collector current of 4 A. Maximum collector emitter voltage of 100 V. Minimum DC current gain (hFE) of 750. Maximum power dissipation of 40 W. 3-pin SOT-32 package with through-hole mount. Wide operating temperature range (-65°C to 150°C).
NPN transistor polarity. Collector-emitter saturation voltage of 2.5 V. Low collector cut-off current of 0.2 mA.
This transistor is ideally suited for industrial control systems, consumer electronics, automotive circuits, and power amplification modules. Its robust electrical specifications and compact form factor enable its use in various demanding electronic designs.
Explore the range of Darlington Transistors at EnvMart for reliable semiconductor components tailored to diverse industrial, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous collector current for this model is 4 A, enabling it to handle high-power applications effectively.
The collector-emitter voltage (Vceo) rating for the BD681 is 100 V, ensuring reliable operation under high voltage conditions.
This model has a minimum DC current gain (hFE) of 750, providing strong signal amplification capabilities.
The BD681 supports a maximum power dissipation of 40 W, making it suitable for demanding power applications.
This unit has a compact height of 10.8 mm and a length of 7.8 mm, facilitating integration into space-constrained designs.
The operating temperature range for this model is from -65°C to 150°C, allowing it to function in diverse environments.
This transistor comes in a 3-pin SOT-32 package with a through-hole mount type for easy PCB integration.
The maximum collector-emitter saturation voltage (VceSAT) for this transistor is 2.5 V, which helps in energy-efficient switching operations.
The maximum collector cut-off current for this model is 0.2 mA, which helps minimize leakage currents.
The BD681 features NPN transistor polarity, making it suitable for various switching and amplification circuits.
The maximum emitter-base voltage (VEBO) for this transistor is 5 V, which is important for its operation in circuits.
This transistor is ideally suited for industrial control systems, consumer electronics, automotive circuits, and power amplification modules.
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